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Surface modified quantum dots, preparation method and application thereof and QLED (quantum-dot light-emitting diode) device

A surface modification and quantum dot technology, applied in the field of quantum dots, can solve the problems affecting the performance of quantum dots and the inability to effectively eliminate the dangling bonds of quantum dots, so as to reduce non-radiative transition losses, suppress defect states and defect energy levels, and improve luminescence efficiency effect

Inactive Publication Date: 2019-01-18
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a surface-modified quantum dot and its preparation method, application and QLED device, aiming to solve the problem that the existing quantum dot surface exposed dangling bonds cannot be effectively eliminated, resulting in surface defects state, which affects the performance of quantum dots

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  • Surface modified quantum dots, preparation method and application thereof and QLED (quantum-dot light-emitting diode) device
  • Surface modified quantum dots, preparation method and application thereof and QLED (quantum-dot light-emitting diode) device

Examples

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Embodiment 1

[0073] The preparation method of the quantum dot of the present embodiment comprises the following steps:

[0074] (1) Prepare an InP / ZnS quantum dot solution (volume 20 ml, in which the mass of quantum dots is about 200 mg);

[0075] (2) Prepare zinc oleate as a Zn cationic ligand precursor. The zinc oleate of the cationic ligand precursor in this example is prepared by the following method: mix 1 mmol of zinc acetate and 2.5 mmol of oleic acid, and place in an inert atmosphere Heated to 170 degrees and reacted for 30 minutes to obtain the zinc oleate of the present embodiment;

[0076] (3) Add 2 mmol of zinc oleate to the InP / ZnS quantum dot solution under an inert atmosphere at 280 degrees Celsius, and keep the temperature at 280 degrees Celsius for 30 minutes;

[0077] (4) Centrifuge after cooling to room temperature: transfer the reacted mixed solution to a centrifuge tube, add 30 ml of acetone, centrifuge the mixed solution at 8,000 rpm for 5 minutes in a high-speed cen...

Embodiment 2

[0079] The preparation method of the quantum dot of the present embodiment comprises the following steps:

[0080] (1) Prepare a CdZnSe quantum dot solution (volume is 25 ml, wherein the mass of quantum dots is about 150 mg);

[0081] (2) Prepare a S-TOP of the anionic ligand precursor of S. The S-TOP of the anionic ligand precursor in this example is prepared by the following method: mix 1.5mmol sulfur and 2ml TOP, and heat in an air atmosphere Reaction at 140 degrees for 30 minutes to obtain the S-TOP of this embodiment;

[0082] (3) Add 1.5 mmol of S-TOP into the CdZnSe quantum dot solution under the inert atmosphere condition of 300 degrees Celsius, and keep the temperature at 300 degrees Celsius for 15 minutes;

[0083] (4) Centrifuge after cooling to room temperature: transfer the reacted mixed solution to a centrifuge tube, add 30 ml of acetone, centrifuge the mixed solution at 8000 rpm for 3 minutes in a high-speed centrifuge, and discard the liquid phase; Re-dispers...

Embodiment 3

[0085] The preparation method of the quantum dot of the present embodiment comprises the following steps:

[0086] (1) Prepare a solution of InP quantum dots (volume 5 ml, wherein the mass of quantum dots is about 20 mg);

[0087] (2) Prepare a Zn cationic ligand precursor oleylamine zinc. The cationic ligand precursor oleylamine zinc in this example is prepared by the following method: mix 1mmol zinc acetate and 1ml oleylamine, under an inert atmosphere Heated to 120 degrees for 30 minutes to obtain the oleylamine zinc of this embodiment;

[0088] (3) Add 1.5 mmol of oleylamine zinc into the CdZnSe quantum dot solution under an air atmosphere of 80 degrees Celsius, and keep the temperature at 80 degrees Celsius for 60 minutes;

[0089] (4) Centrifuge after cooling to room temperature: transfer the reacted mixed solution to a centrifuge tube, add 30 ml of acetone, centrifuge the mixed solution at 8000 rpm for 3 minutes in a high-speed centrifuge, and discard the liquid phase;...

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Abstract

The invention discloses surface modified quantum dots, a preparation method and an application thereof and a QLED (quantum-dot light-emitting diode) device. The method comprises the following steps: preparing a quantum dot solution; preparing an ion-containing organic ligand precursor; adding the ion-containing organic ligand precursor to the quantum dot solution for surface modification of quantum dots to prepare the surface modified quantum dots. The ion-containing organic ligand precursor is added to the quantum dot solution and bonded with dangling bonds on the surfaces of the quantum dots, so that exposed dangling bonds on the surfaces of the quantum dots are eliminated to the greatest extent. By reducing the dangling bonds on the surfaces of the quantum dots, luminous efficiency of the quantum dots can be improved.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a surface-modified quantum dot, its preparation method, application and QLED device. Background technique [0002] The remarkable quantum confinement effect of quantum dots makes it have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, wide absorption spectrum, high luminous intensity and long fluorescence lifetime. These characteristics make quantum dots have broad application prospects in optoelectronic fields such as flat panel displays, solid-state lighting, and photovoltaic solar energy. [0003] The size of quantum dots is usually below 20 nanometers, so the specific surface area of ​​quantum dot materials is very large, and the surface characteristics and properties of quantum dots have a significant impact on the performance of quantum dots. There are a large number of dangling bonds on the surface of quantum dots, som...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/06C09K11/88H01L51/50H01L51/56C07C51/41C07C57/12C07C209/00C07C211/21B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/025C09K11/06C09K11/883B82Y20/00B82Y30/00B82Y40/00C07C51/412C07C57/12C07C209/00C07C211/21H10K85/60H10K50/115H10K71/00
Inventor 杨一行杨成玉丘洁龙聂志文
Owner TCL CORPORATION
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