A method of simulating the parasitic capacitance of a power switch tube to pre-adjust the driving signal

Abstract

In the debugging process of the drive stage switch tube driving the power switch tube, due to the influence of the capacitance parameters of the power switch tube, the output rated voltage value of the gate drive circuit voltage of the power switch tube MOSFET tube is often different from the actual gate drive voltage. There is a difference. While affecting the working effect of the power MOSFET tube, it is necessary to perform repeated adjustments of the later circuit. In the application of the half-bridge and full-bridge circuits, due to the coordination of the gate drive voltage signal, the existence of the gate-source parasitic capacitance and the value of the parasitic capacitance The influence of the offset causes distortion of the gate drive voltage signal, and even damage to the MOSFET tube of the driving stage. The invention provides a debugging method, which uses capacitance to simulate the parasitic capacitance of the power switch tube to pre-adjust the driving signal of the driving stage MOSFET, shortens the research and development debugging cycle, and reduces the loss caused by mistakes in the debugging process.

Description

technical field [0001] The invention belongs to the field of electronic circuit design, and in particular relates to a method for simulating the parasitic capacitance of a power type switch tube to pre-adjust the driving signal of a drive stage switch tube. Background technique [0002] Power switching tubes are widely used in switching power supplies and other fields due to their advantages such as fast switching speed, low driving power, and strong overload capability, and further miniaturization of power supplies has become a reality. Modern MOSFET tube technology has also developed towards a more precise and better direction. The parasitic parameters of the switch tube play an important role in the performance of the switch tube. figure 1 It is a schematic diagram of the MOSFET tube structure. The existence of the parasitic capacitance between the drain and the source of the MOSFET will affect the voltage, current, frequency, etc. of the output signal. It can be seen ...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for simulating the parasitic capacitance of a power switch tube to pre-adjust the gate drive signal, so as to solve the problem of the power switch tube, due to its own inherent parasitic capacitance value and the deviation of the parasitic capacitance value during work. shift, causing the problem that the gate drive signal cannot meet the rated output requirements

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