Device and process for controlling heating temperature field to purify and prepare polycrystalline silicon

A technology of polysilicon and temperature field, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of unfavorable columnar crystal growth, discontinuous control of temperature field, etc., achieve good cooling effect, ensure cooling effect, improve The effect of heat transfer efficiency

Active Publication Date: 2019-01-22
CHENGDU SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: the temperature field control of the existing power drop method is discontinuous, and the thermal field is a stepwise mutation from top to bottom, which

Method used

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  • Device and process for controlling heating temperature field to purify and prepare polycrystalline silicon
  • Device and process for controlling heating temperature field to purify and prepare polycrystalline silicon
  • Device and process for controlling heating temperature field to purify and prepare polycrystalline silicon

Examples

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Embodiment 1

[0049] This embodiment provides a device for purifying and preparing polysilicon by controlling the heating temperature field, which includes a furnace body 2, and a heat insulation board 3 is arranged inside the furnace body 2, and a through hole is opened in the middle of the heat insulation board 3 for accommodating the cooling plate 1. A crucible 4 is placed on the cooling plate 1, and the crucible 4 is provided with a heating induction coil 5 and a thermal insulation cylinder 6. The thermal insulation cylinder 6 is provided with an upper graphite heating ring 7, a middle graphite heating ring 8 and a lower graphite heating ring 9, and the upper graphite heating ring Connecting rings 10 are provided between the graphite heating ring 7 and the middle graphite heating ring 8, and between the middle graphite heating ring 8 and the lower graphite heating ring 9. Made of high temperature resistant material. The connection of the upper section graphite heating ring 7, the middle...

Embodiment 2

[0051] Further improvement on the basis of Example 1, the connecting ring is made of zirconia ceramics or alumina ceramics, and several through holes 11 are provided on the side wall of the connecting ring 10 . The inner bottom of the heat preservation cylinder 6 is provided with a limiting ring plate 12, the inner diameter of the limiting ring plate 12 is smaller than the inner diameters of the upper graphite heating ring 7, the middle graphite heating ring 8, the lower graphite heating ring 9 and the connecting ring 10.

Embodiment 3

[0053] Further improvement on the basis of Example 2, the cooling plate 1 includes a cylindrical shell 101, the shell 101 is provided with a gas distribution sleeve I102 and a gas distribution sleeve П103 of the coaxial center line, the gas distribution sleeve The sleeve П103 is sleeved outside the gas distribution sleeve I102; the outer diameter of the gas distribution sleeve П103 is smaller than the inner diameter of the housing 101, and the inner diameter of the gas distribution sleeve П103 is larger than the outer diameter of the gas distribution sleeve I102;

[0054] The inside of the gas distribution sleeve I102 and the gas distribution sleeve П103 are both ring-shaped hollow chamber structures, and the inner wall of the gas distribution sleeve П103 and the outer wall of the gas distribution sleeve I102 are provided with ventilation holes 104;

[0055] The bottom of the housing 101 is provided with an annular air inlet chamber 105 along the circumference, the air inlet ch...

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Abstract

The invention discloses a device for controlling a heating temperature field to purify and prepare polycrystalline silicon. The furnace body is provided therein with a heat insulation plate, a coolingplate, a crucible, a heating induction ring and a heat preservation tube. The heat preservation tube is provided therein with an upper graphite heating ring, a middle graphite heating ring and a lower graphite heating ring, connection rings are arranged between the upper graphite heating ring and the middle graphite heating ring, and between the middle graphite heating ring and the lower graphiteheating ring, respectively, and the connection rings are made from a high temperature resistant material with heat conduction coefficient of 10-50 W/m.k. A purification process comprises the steps: introducing a cooling gas into a cooling plate; introducing an inert gas into a furnace body, and meanwhile discharging through an exhaust pipe provided at the top of the furnace body to ensure a certain gas pressure existing in the furnace body; and controlling the upper graphite heating ring, the middle graphite heating ring, and the lower graphite heating ring to cool according to a certain procedure. The device and process for controlling heating temperature field to purify and prepare polycrystalline silicon facilitates the formation of a uniform temperature gradient, being favorable for crystal growth, and can effectively prevent the stepwise sudden change of a stepwise heat field from top down.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a device and process for purifying and preparing polysilicon by controlling a heating temperature field. Background technique [0002] At present, solar energy has become the most concerned green energy. Polysilicon is currently the most widely used solar cell material. Directional solidification is an effective metallurgical purification method to obtain solar-grade polysilicon materials. Directional solidification refers to the use of forced means in the solidification process to establish a temperature gradient in a specific direction in the solidified metal and unsolidified metal melt, so that the melt solidifies in the direction opposite to the heat flow, and finally obtains a columnar crystal with a specific orientation. Technology. Directional solidification is an important means to study solidification theory and metal solidification laws, and it is also an importa...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B28/06C01B33/037
CPCC01B33/037C30B28/06C30B29/06
Inventor 羊实庹开正
Owner CHENGDU SILICON TECH CO LTD
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