Nonvolatile memory based on two-dimensional ferroelectric semiconductor and its preparation method

Abstract

A nonvolatile memory based on a two-dimensional ferroelectric semiconductor, comprising: a substrate made of a flexible material; a graphene layer, elongated, located on the substrate; a two-dimensional semiconductor material layer, located on the substrate a bottom and a part of the graphene layer; a ferroelectric film on the two-dimensional semiconductor material layer; a top electrode on the ferroelectric film; and a bottom electrode on a part of the graphene layer; The preparation method of the volatile memory includes: first preparing a two-dimensional ferroelectric single crystal material; preparing a graphene layer on a flexible substrate; preparing a two-dimensional semiconductor material layer on the prepared graphene layer and using the prepared ferroelectric single crystal crystalline material to prepare ferroelectric thin film; and prepare top electrode and bottom electrode to complete the preparation of non-volatile memory based on two-dimensional ferroelectric semiconductor, so as to alleviate the difficult quantum tunneling and heat dissipation difficulties after further miniaturization of memory in the prior art. technical problem.

Description

technical field [0001] The present disclosure relates to the fields of preparation of two-dimensional semiconductor materials and ferroelectric storage, and in particular to a nonvolatile memory based on two-dimensional ferroelectric semiconductors and a preparation method thereof. Background technique [0002] Non-volatile memory cells are an integral part of digital, portable, self-contained electronics, and are receiving increasing attention due to their miniaturization, low power consumption, and reliable data storage, which are ideally suited to address large data capacity and integration issues. Attention, memory based on ultra-thin two-dimensional materials has been studied and reported, due to its excellent electrical properties and storage density, it has great potential for development, among them, memory devices based on ferroelectric materials have simple storage structure, high storage density, The advantages of low power consumption, high storage speed, radiati...

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Problems solved by technology

However, in order to increase the data storage density, it is usually necessary to use the polarization of the ferroelectric film in the vertical direction. When such a ferroelectric material is made into a film by surface epitaxial growth technology, due to the effect of the depolarization field, its ferroelectricity in the Most of them will disappear under a certain critical thickness, which makes the storage density of traditional ferroelectric memory lower than that based on silicon-based floating gate memory, which limits the application of ferroelectric memory in large-scale nanotechnology integrated devices, and has become a ferroelectric memory. One of the bottlenecks in the application of ERAM

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