Chemico-mechanical polishing method of metal interconnection line with ruthenium barrier layer

A technology of barrier layer and polishing liquid, applied in the field of polishing liquid, to achieve the effect of good flatness, good wafer surface and interface quality

Inactive Publication Date: 2019-02-01
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the CMP process for ruthenium-containing barrier layers still needs to be further improved

Method used

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  • Chemico-mechanical polishing method of metal interconnection line with ruthenium barrier layer
  • Chemico-mechanical polishing method of metal interconnection line with ruthenium barrier layer
  • Chemico-mechanical polishing method of metal interconnection line with ruthenium barrier layer

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Experimental program
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Effect test

preparation example Construction

[0052] The preparation method of the first polishing liquid and the second polishing liquid is as follows: according to the composition ratio of the first polishing liquid and the second polishing liquid, SiO 2 Abrasive particles were added to deionized water, followed by oxidizing agent (H 2 O 2 ), triazole-based corrosion inhibitor (1,2,4-triazole) and other chemical components, stir with a magnetic stirrer for 30 minutes, and use magnetic force in the chemical mechanical polishing process of the first polishing solution and the second polishing solution. The agitator keeps stirring.

[0053] The chemical mechanical polishing method applied includes: using Universal-150 polishing machine (Tianjin Huahai Qingke Electromechanical Technology Co., Ltd.), using IC1000 polishing pads in the first polishing process and the second polishing process, using PolitexReg polishing pads in the third polishing process, After the third polishing process, the wafer surface was cleaned with...

Embodiment 1

[0056] Use a square pattern wafer with a side length of 1.55 inches. Copper polishing process: P1 polishing pressure is 2.0psi, OP polishing pressure is 1.3psi, the first polishing liquid flow rate is 130mL / min, the polishing speed is 90 / 100rpm, and the first polishing liquid contains 1wt.%H 2 O 2 , 5wt.%SiO 2 Abrasive, using IC1000 polishing pad.

Embodiment 2

[0058] Use a square pattern wafer with a side length of 1.55 inches. Copper polishing process: P1 polishing pressure is 1.5psi, OP polishing pressure is 1.3psi, the first polishing liquid flow rate is 130mL / min, the polishing speed is 90 / 100rpm, and the first polishing liquid contains 1wt.%H 2 O 2 , 5wt.%SiO 2 Abrasive, using IC1000 polishing pad.

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PUM

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Abstract

The invention discloses a patterned wafer polishing method and a polishing solution suitable for polishing a ruthenium barrier layer in the patterned wafer. The polishing method comprises that (1) a first polishing solution used to carry out primary and second polishing on a metal layer successively; and (2) a second polishing solution is used to carry out tertiary polishing on the ruthenium barrier layer to obtain a polished patterned wafer. The polishing method can be used to carry out chemico-mechanical polishing on the patterned wafer with the ruthenium barrier layer interconnection structure, materials can be removed from the metal layer, ruthenium barrier layer and dielectric layer of the wafer selectively, high surface and interface quality can be achieved after polishing, and the polished wafer is globally and locally flatter and has lower surface defects.

Description

technical field [0001] The present invention relates to the field of chemical mechanical polishing, in particular, the present invention relates to a polishing method of a pattern wafer and a polishing liquid suitable for polishing a ruthenium barrier layer in the wafer. Background technique [0002] As the technology node of integrated circuits continues to advance, the back-end process using copper (Cu) and low-k dielectrics encounters two key problems: how to reduce the thickness of the barrier layer; how to achieve defect-free trench filling with Cu. The traditional tantalum / tantalum nitride (Ta / TaN) barrier layer can effectively block the interdiffusion between Cu and dielectric materials, however the minimum thickness of the Ta / TaN barrier layer is about 30nm, which makes it suitable for finer trench structures. difficult to continue to apply. Therefore, a completely new barrier layer material is required to achieve seedless Cu electroplating of Cu on it, also known a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
CPCH01L21/30625
Inventor 程洁王同庆谢李乐路新春
Owner TSINGHUA UNIV
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