Atomic layer deposition system and method

Abstract

The invention provides an atomic layer deposition system. The atomic layer deposition system is provided with a reaction chamber, a precursor transmission pipeline connected with the reaction chamber,a first inert gas transmission pipeline connected with the reaction chamber, and used for transmitting inert gas to the reaction chamber to maintain a stable pressure of the reaction chamber, a second inert gas transmission pipeline connected with the reaction chamber, and used for conveying the inert gas to the reaction chamber to purge the interior of the reaction chamber, and a vacuum pipelineand a vacuum pump which are connected with the reaction chamber, and used for extracting redundant gas in the reaction chamber, so that a complex gas cleaning process is avoided, and waste for a precursor reaction source is reduced; and meanwhile, the pressure of the reaction chamber and the stability of a gas flow field are guaranteed, and impurities caused due to gas channel disturbance are avoided, so that a film with high compactness and a low impurity content is obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an atomic layer deposition system and method. Background technique [0002] With the development of the integrated circuit industry, the feature size of components (device critical dimension) is gradually reduced, and the aspect ratio (aspect ratio) is gradually increased. Films with good formability pose serious challenges. Atomic layer deposition (Atomic layer deposition, ALD) is a new thin film deposition method proposed to meet this challenge. Atomic layer deposition is achieved by independently feeding the reaction precursor into the reactor, and the reaction is realized through the catalysis of the substrate surface. The first precursor substance is pulsed into the reactor and adsorbed on the substrate surface, and then the excess precursor substance is purged from the reactor to complete the first half reactions; followed by the second precursor The ...

AI Technical Summary

Problems solved by technology

Some precursors adsorb well to chamber materials, making it difficult and time-consuming to evacuate them from the chamber

Moreover, when purging, the precursor does not enter the reaction chamber, but is directly sucked away by the vacuum pump, which wastes the precursor, especially the organometallic precursor source, which is usually more expensive

In addition, moisture and oxygen impurities in the precursor or purge gas materials are especially undesirable in ALD processes, can seriously affect the process results, and bring more challenges to process control

Images