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A method for repairing structural defects of graphene nanosheets and splicing between sheets

A technology of graphene nanosheets and structural defects, applied in graphene, nano-carbon, chemical instruments and methods, etc., can solve the problems of carbon atom loss, intrinsic defects, etc., achieve short reaction time, fast heating speed, and easy control Effect

Active Publication Date: 2020-05-22
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

All of the above methods can reduce the oxygen-introduced defects of graphene external atoms to a certain extent, but the removal of externally-introduced defects is often accompanied by the loss of carbon atoms, thus forming intrinsic defects

Method used

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  • A method for repairing structural defects of graphene nanosheets and splicing between sheets
  • A method for repairing structural defects of graphene nanosheets and splicing between sheets
  • A method for repairing structural defects of graphene nanosheets and splicing between sheets

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Embodiment 1

[0023] Embodiment 1, with reference to figure 1 , a method for repairing structural defects of graphene nanosheets and splicing between sheets, comprising the following steps:

[0024] 1) Refer to figure 2 , nickel nanoparticle films grown on the surface of silicon substrates: refer to figure 2 (a), take NiCl 2 ·6H 2 Dissolve 0.2g of O particles in 30mL of ethylene glycol and make A solution 1; refer to figure 2 (b), take N 2 h 4 ·H 2 O solution 0.4g, NaOH reagent 0.05g was dissolved in 30mL ethylene glycol and stirred evenly to prepare B solution 2; refer to figure 2 (c), after A solution 1 and B solution 2 are uniformly dissolved, slowly add B solution 2 into A solution 1 and mix evenly to obtain a growth solution 3 containing nickel ions; refer to figure 2 (d), then prepare the cleaned silicon substrate 4; refer to figure 2 (e), grow nickel nanoparticle thin film 6 on silicon substrate 4 surface by microwave oven 5 microwave heating method; figure 2 (f), ta...

Embodiment 2

[0028] Embodiment 2, with reference to figure 1 , a method for repairing structural defects of graphene nanosheets and splicing between sheets, comprising the following steps:

[0029] 1) Refer to figure 2 , nickel nanoparticle films grown on the surface of silicon substrates: refer to figure 2 (a), take NiCl 2 ·6H 2 Dissolve 0.4g of O particles in 30mL of ethanol and make A solution 1; refer to figure 2 (b), take N 2 h 4 ·H 2 O solution 0.5g, NaOH reagent 0.06g was dissolved in 30mL ethylene glycol and stirred evenly to prepare B solution 2; refer to figure 2 (c), after A solution 1 and B solution 2 are uniformly dissolved, slowly add B solution 2 into A solution 1 and mix evenly to obtain a growth solution 3 containing nickel ions; refer to figure 2 (d), then prepare the cleaned silicon substrate 4; refer to figure 2 (e), grow nickel nanoparticle thin film 6 on silicon substrate 4 surface by microwave oven 5 microwave heating method; figure 2 (f), taking out t...

Embodiment 3

[0033] Embodiment 3, with reference to figure 1 , a method for repairing structural defects of graphene nanosheets and splicing between sheets, comprising the following steps:

[0034] 1) Refer to figure 2 , nickel nanoparticle films grown on the surface of silicon substrates: refer to figure 2 (a), take nickel sulfate particle 0.4g and dissolve completely in 35mL glycerin and make A solution 1; figure 2 (b), take N 2 h 4 ·H 2 O solution 0.4g, NaOH reagent 0.07g was dissolved in 45mL ethylene glycol and stirred evenly to prepare B solution 2; refer to figure 2 (c), after A solution 1 and B solution 2 are uniformly dissolved, slowly add B solution 2 into A solution 1 and mix evenly to obtain a growth solution 3 containing nickel ions; refer to figure 2 (d), then prepare the cleaned silicon substrate 4; refer to figure 2 (e), grow nickel nanoparticle thin film 6 on silicon substrate 4 surface by microwave oven 5 microwave heating method; figure 2 (f), taking out t...

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Abstract

The invention relates to a graphene nanosheet structure defect repairing and inter-sheet splicing method which comprises the following steps: firstly preparing a growth solution containing nickel ions, and growing a nickel nanoparticle thin film on the surface of a silicon substrate through a microwave heating method; then preparing graphene nanosheets and ethanol into mixed liquid, extruding themixed liquid to the surface of deionized water at a uniform speed to obtain graphene nanosheets suspended on the surface of the deionized water, transferring the graphene nanosheets suspended on the surface of the deionized water to the surface of the nickel nanoparticle thin film on the silicon substrate, and performing drying treatment on the silicon substrate with the graphene nanosheets and the nickel nanoparticle thin film; finally performing annealing treatment on the silicon substrate with the graphene nanosheets and the nickel nanoparticle thin film, and quickly cooling to room temperature; and removing the nickel nanoparticle thin film with corrosive liquid to obtain a large-format and high-quality grapheme thin film. By adopting the graphene nanosheet structure defect repairing and inter-sheet splicing method provided by the invention, micro-nano graphene sheet structure defect repairing and inter-sheet splicing are realized, and the process is simple and reliable.

Description

technical field [0001] The invention belongs to the technical field of graphene defect repairing, and in particular relates to a method for repairing structural defects of graphene nanosheets and splicing between sheets. Background technique [0002] The unique two-dimensional crystal structure of graphene endows it with many excellent properties such as ultra-high specific surface area, high electron mobility and thermal conductivity, and high mechanical strength. As a new type of low-dimensional functional carbon material, graphene is widely used in solar cells, electronics Devices, transistors, supercapacitors, transparent conductive electrodes, photosensitive elements, biomedical and gene sequencing, antibacterial devices and other fields have extensive and far-reaching application potential. Therefore, high-quality graphene with a perfect structure has become the pursuit of researchers. Target. However, in the current graphene preparation process, there are inevitably ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
CPCC01B32/194C01B2204/22C01B2204/32
Inventor 雷彪叶国永刘红忠张生睿班耀文赵国博张鸿健
Owner XI AN JIAOTONG UNIV