A low-pressure induced rapid synthesis of Cu at room temperature 2 S-Based Thermoelectric Materials Approach

A technology of thermoelectric materials and room temperature, applied in the direction of copper sulfide, etc., can solve the problems of difficult to clean by-products, difficult to control components, environmental pollution and other problems, and achieve the effect of easy product composition, convenient operation, and suitable for popularization and application

Active Publication Date: 2020-08-25
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently Cu 2 S compounds are mainly prepared by long-term solid-state reaction method, melting annealing method and self-propagating combustion synthesis technology. High temperature treatment will bring a problem that can never be solved, which is the volatilization of S, which makes it difficult to control the composition.
However, the low-temperature chemical preparation technology usually uses toxic raw materials and causes pollution to the environment. At the same time, the target product is usually accompanied by by-products that are difficult to clean and other problems.

Method used

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  • A low-pressure induced rapid synthesis of Cu at room temperature  <sub>2</sub> S-Based Thermoelectric Materials Approach
  • A low-pressure induced rapid synthesis of Cu at room temperature  <sub>2</sub> S-Based Thermoelectric Materials Approach
  • A low-pressure induced rapid synthesis of Cu at room temperature  <sub>2</sub> S-Based Thermoelectric Materials Approach

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A low-pressure induced rapid synthesis of Cu at room temperature 2 The method for S-based thermoelectric material, comprises the steps:

[0030] 1) Using Cu powder and S powder as raw materials, weigh Cu powder and S powder according to the stoichiometric ratio of 2:1, totaling 5.5g;

[0031] 2) Place the weighed raw materials in a test tube, and then place them in a SK-1 rapid mixer. The entire mixing device is placed in a vacuum chamber with a vacuum of -0.09MPa. Set the mixing frequency at 900 rpm for 3 minutes, take out the powder to obtain the reaction product.

[0032] The product obtained in this embodiment is analyzed by XRD, and the results are shown in figure 2 ; The main phase obtained in the figure is Cu 2 The S compound also contains a certain amount of Cu element, which shows that simply shaking Cu and S stoichiometric (2:1) mixed powder at room temperature under vacuum conditions can quickly synthesize Cu 2 S compound.

Embodiment 2

[0034] A low-pressure induced rapid synthesis of Cu at room temperature 2 The method for S-based thermoelectric material, comprises the steps:

[0035] 1) Using Cu powder and S powder as raw materials, according to the stoichiometric ratio of Cu 2(1+x) S (x=1%, 3%, 5%) were weighed, totaling 5.5g respectively;

[0036] 2) Place the weighed raw materials in a test tube, and then place them in a SK-1 fast mixer. The entire mixing device is placed in a vacuum chamber with a vacuum of -0.1MPa. Set the mixing frequency The temperature is 3000rpm, the time is 3min, and the powder is taken out to obtain the reaction product.

[0037] The product obtained in this embodiment is analyzed by XRD, and the results are shown in image 3 ; The figure shows that a large amount of Cu was generated 2 The S compound also contains a small amount of Cu element, which shows that the mixed powder of Cu and S (with a slight excess of Cu) can be quickly synthesized by simply shaking the mixed powd...

Embodiment 3

[0039] A low-pressure induced rapid synthesis of Cu at room temperature 2 The method for S-based thermoelectric material, comprises the steps:

[0040] 1) Using Cu powder and S powder as raw materials, according to the stoichiometric ratio of Cu 2(1+x) S (x=-1%, -3%) were weighed, totaling 5.5g respectively;

[0041] 2) Place the weighed raw materials in a test tube, and then place them in a SK-1 fast mixer. The entire mixing device is placed in a vacuum chamber with a vacuum of -0.1MPa. Set the mixing frequency The temperature is 1500rpm, the time is 4min, and the powder is taken out to obtain the reaction product.

[0042] The product obtained in this embodiment is analyzed by XRD, and the results are shown in Figure 4 ; The figure shows that the resulting product is Cu 2 The S compound is single-phase, indicating that the mixed powder of Cu and S (slightly missing Cu) can be prepared by simply shaking the mixed powder of Cu and S at room temperature under vacuum condit...

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Abstract

The invention firstly develops a method for rapidly synthesizing a Cu2S-based thermoelectric material by low-pressure induction at room temperature. Cu powder and S powder are used as raw materials, and a simple shaking reaction is carried out at room temperature in vacuum to synthesize a Cu2S compound in a short time. The method can realize rapid preparation of the Cu2S-based material at room temperature, the reaction conditions involved are extremely mild, the problem of S volatilization at a high temperature can be effectively avoided, the product composition is easily and accurately controlled, and a Cu2S single-phase compound can be rapidly obtained under the condition of slight loss of Cu. The raw materials are cheap, the process is super simple, the preparation time is super short,and a good foundation can be laid for the preparation and large-scale application of Cu2S materials.

Description

technical field [0001] The invention belongs to the field of material preparation science, in particular to a low-pressure induced room temperature rapid synthesis of Cu 2 Approaches to S-based thermoelectric materials. Background technique [0002] Thermoelectric conversion technology uses thermoelectric materials to directly convert heat energy and electric energy. It has the characteristics of small system size, high reliability, no emission of pollutants, wide applicable temperature range, and effective use of low-density energy. It is used in industrial waste heat and automobile exhaust waste heat. It has a wide range of applications in the fields of recycling, high-precision temperature control and special power supply technology. The conversion efficiency of thermoelectric materials is determined by the dimensionless thermoelectric figure of merit ZT (ZT=α 2 σT / κ, where α is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G3/12
CPCC01G3/12C01P2002/72
Inventor 唐新峰杨东旺黎俊李彦雨柳伟鄢永高
Owner WUHAN UNIV OF TECH
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