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Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof

A photoresist and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, photoplate-making process on patterned surface, and photosensitive materials used in optomechanical equipment, etc. It can solve the problem of short diffusion distance and resist pattern change Bad, large absorption and other problems

Inactive Publication Date: 2002-10-30
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in Conventional Example 3, the absorption of laser light (248nm, 193nm) by naphthoquinone diazosulfonate is large, and the resist pattern becomes an inverted cone instead and deteriorates.
There is also a tendency that even with such a photoacid generator that generates an acid with a short diffusion distance, the unevenness of the side wall tends to be remarkable.

Method used

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  • Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof
  • Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof
  • Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0040] In the chemically amplified negative resist of Example 1 of the present invention, add the triphenylsulfonium tosylate (diffusion distance of tosylate) shown in the formula (1-1) as the photoacid generator function 23nm), and triphenylsulfonium trifluoromethanesulfonate shown in the above formula (3-1) (trifluoromethanesulfonate diffusion distance 46nm).

[0041] The chemically amplified negative resist of this example 1 is triphenylsulfonium trifluoromethanesulfonate and polyhydroxystyrene resin and melamine derivatives as crosslinking agent and triphenylsulfonium as photoacid generator The mesylate is mixed at a molar ratio of 50%, and the content is 7.0% by weight of the resin.

[0042] A resist film was formed on a wafer using the present chemically amplified resist. Then, the resist film is exposed to a mask or a reticle with a desired semiconductor integrated circuit pattern by a KrF excimer laser, processed by PEB, and developed. As a result, the side wall has l...

example 2

[0044] In the chemically amplified negative resist of Example 2 of the present invention, add N-toluenesulfonate-5-norbornene-2 ​​shown in the formula (2-1) as a photoacid generator function, 3-dicarboxyimide (toluenesulfonate diffusion distance 23nm), and triphenylsulfonium trifluoromethanesulfonate (trifluoromethanesulfonate diffusion distance 46nm) shown in the above formula (3-1) .

[0045] The chemically amplified negative resist of this example 2 is to use triphenylsulfonium trifluoromethanesulfonate and polyhydroxystyrene resin and melamine derivatives as crosslinking agent and N-toluenesulfonate as photoacid generator The acid salt-5-norbornene-2,3-dicarboximide was mixed at a molar ratio of 40%, and the content was 6.0% by weight of the resin.

[0046] A resist film was formed on a wafer using the present chemically amplified resist. Then, through a mask or reticle with the desired semiconductor integrated circuit pattern, it is exposed by a KrF excimer laser, proce...

example 3

[0048] In the chemically amplified negative resist of Example 3 of the present invention, add the N-toluenesulfonate-5-norbornene-2 ​​shown in the formula (2-1) as the photoacid generator function, 3-dicarboxyimide (toluenesulfonate diffusion distance 23nm), and N-trifluoromethanesulfonate-5-norbornene-2,3-dicarboxylate shown in the above (4-1) formula Imide (Trifluoromethanesulfonate diffusion distance 46nm).

[0049] The chemically amplified negative resist of this example 3 is N-trifluoromethanesulfonate-5-norbornene-2,3-dicarboxyimide and polyhydroxystyrene resin and melamine as crosslinking agent Derivatives and N-toluenesulfonate-5-norbornene-2,3-dicarboxyimide used as a photoacid generator are mixed at a molar ratio of 30%, and the content is 5.0% by weight of the resin.

[0050] A resist film was formed on a wafer using the present chemically amplified resist. Then, through a mask or reticle with the desired semiconductor integrated circuit pattern, it is exposed by ...

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Abstract

The present invention provides a photoresist pattern with a photoresist shape that suppresses the difference between sparse and dense dimensions and has less sidewall unevenness in a chemically amplified negative photoresist. 100-1000, a photoacid generator with a diffusion distance of 30-60nm, and a photoacid generator with a molecular weight of 100-1000, and a photoacid generator with a diffusion distance of 10-30nm, in a molar ratio of 5-95% , the total amount of the photoacid generator is a photoresist material with a resin content percentage of 1-15%.

Description

technical field [0001] The present invention relates to exposure through a reticle mask or other masks with a desired semiconductor integrated circuit image, and after post-exposure baking (Post Exposure Bake, hereinafter referred to as PEB) treatment, it is developed with a developing solution to form a rectangular shape. A material for a photoresist film formed on a semiconductor substrate as a photoresist pattern, a method for etching a resist pattern made of the material, and a method for manufacturing a semiconductor device. Background technique [0002] Existing exposure techniques are mainly an exposure device that uses g-line (436 nm) and i-line (365 nm) for the exposure light, and an exposure technique that combines a novolac photoresist. However, with the high integration of large-scale integrated circuits, photolithography technology using far-infrared laser light (248nm, 193nm), which is more beneficial to miniaturization, is required. As its resist, the existing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/038H01L21/027
CPCG03F7/0045Y10S430/115Y10S430/122
Inventor 山名慎治
Owner NEC ELECTRONICS CORP