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Growth method for high-quality Cu2Se(1-x)Ax crystal

A growth method and high-quality technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as difficult analysis of high thermoelectric performance mechanism of materials, difficulties in practical application development, etc., to achieve simple and effective crystal growth methods, The device is simple and easy to operate, and the delivery agent is stable

Active Publication Date: 2019-02-22
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, currently about Cu 2 Se (1-x) I x The experimental reports are only polycrystalline ceramics, and polycrystalline ceramics contain many defects, so it is difficult to analyze the mechanism behind the high thermoelectric properties of the material, and there are also great difficulties in the development of practical applications.

Method used

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  • Growth method for high-quality Cu2Se(1-x)Ax crystal
  • Growth method for high-quality Cu2Se(1-x)Ax crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Weigh 1.1g of Cu2 Se and 100mg TeCl 4 The powder is ground and mixed with a mortar and placed in a quartz tube that has been pickled and dried. After the quartz tube containing the above growth materials is vacuum-sealed, it is placed in a high-temperature tube furnace with two temperature zones and transported by chemical vapor phase. The temperature of the growth end is 500°C, the temperature of the raw material end is 600°C, grow for 10 days under this temperature gradient, and finally cool naturally to room temperature to obtain high-quality Cu 2 Se 0.98 Cl 0.02 Single crystal, the largest dimension is about 1.5mm.

Embodiment 2

[0028] Weigh 1.1g of Cu 2 Se and 150mg of TeCl 4 The powder is ground and mixed with a mortar and placed in a quartz tube that has been pickled and dried. After the quartz tube containing the above growth materials is vacuum-sealed, it is placed in a high-temperature tube furnace with two temperature zones and transported by chemical vapor phase. The temperature of the growth end is 500°C, the temperature of the raw material end is 600°C, grow for 10 days under this temperature gradient, and finally cool naturally to room temperature to obtain high-quality Cu 2 Se 0.95 Cl 0.05 Crystals, about 1.5mm in largest dimension.

Embodiment 3

[0030] Weigh 1.1g of Cu 2 Se and 100mg of TeBr 4 The powder is ground and mixed with a mortar and placed in a quartz tube that has been pickled and dried. After the quartz tube containing the above growth materials is vacuum-sealed, it is placed in a high-temperature tube furnace with two temperature zones and transported by chemical vapor phase. The temperature of the growth end is 550°C, the temperature of the raw material end is 650°C, grow for 10 days under this temperature gradient, and finally cool naturally to room temperature to obtain high-quality Cu 2 Se 0.97 Br 0.03 Single crystal, the largest dimension is about 1.5mm.

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Abstract

The invention discloses a growth method for a high-quality Cu2Se(1-x)Ax crystal. The method comprises the following steps: (1) preparing raw materials, namely weighing a certain amount of Cu2Se powder, adding TeCl4, TeBr4 or I2 powder as a transportation agent and a doping agent, grinding and mixing uniformly by a mortar, adding the raw materials into a clean high-temperature-resistant quartz tube, and sealing by gas flames in a vacuum state for later use; (2) crystal growth, namely adding the quartz tube sealed in the step (1) into a two-temperature-zone or multi-temperature-zone tube furnace, and setting a growth temperature, thereby obtaining the Cu2Se(1-x)Ax crystal by virtue of growth in a certain cycle, wherein A is Cl, Br or I. The growth method for the Cu2Se(1-x)Ax crystal providedby the invention has the advantages of being simple in growth equipment, low in cost, high in quality of the grown crystal, large in size and the like.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a method for growing high-quality Cu 2 Se (1-x) A x (A = Cl, Br, I) crystal method. Background technique [0002] Cuprous selenide (Cu 2 Se) belongs to transition metal chalcogenides. In recent years, in the research of thermoelectric materials, solar materials, topological materials, and giant magnetoresistance materials, transition metal chalcogenides have attracted great attention in the field of materials and physics due to their rich physical properties and application value. It is well known that as the atomic number Z increases in transition metal elements, the electron-electron correlation (U) effect will weaken, but the spin-orbit coupling effect will increase. Variations of these two effects increase the possibility of tuning material properties, resulting in rich physical phenomena. Among them, silver chalcogenides (such as Ag 2 Te) have a giant magnetore...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/00
CPCC30B25/00C30B29/46
Inventor 吕洋洋陈思思陈延彬姚淑华陈延峰
Owner NANJING UNIV
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