Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

a high quality c 2 the se (1-x) a x crystal growth method

A growth method and high-quality technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as difficult analysis of high thermoelectric performance mechanism of materials, difficulties in practical application development, etc., to achieve simple and effective crystal growth methods, The device is simple and easy to operate, and the delivery agent is stable

Active Publication Date: 2020-05-05
NANJING UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, currently about Cu 2 Se (1-x) I x The experimental reports are only polycrystalline ceramics, and polycrystalline ceramics contain many defects, so it is difficult to analyze the mechanism behind the high thermoelectric properties of the material, and there are also great difficulties in the development of practical applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a high quality c <sub>2</sub> the se <sub>(1-x)</sub> a <sub>x</sub> crystal growth method
  • a high quality c <sub>2</sub> the se <sub>(1-x)</sub> a <sub>x</sub> crystal growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026]Weigh 1.1g of Cu 2 Se and 100mg TeCl 4 The powder is ground and mixed with a mortar and placed in a quartz tube that has been pickled and dried. After the quartz tube containing the above growth materials is vacuum-sealed, it is placed in a high-temperature tube furnace with two temperature zones and transported by chemical vapor phase. The temperature of the growth end is 500°C, the temperature of the raw material end is 600°C, grow for 10 days under this temperature gradient, and finally cool naturally to room temperature to obtain high-quality Cu 2 Se 0.98 Cl 0.02 Single crystal, the largest dimension is about 1.5mm.

Embodiment 2

[0028] Weigh 1.1g of Cu 2 Se and 150mg of TeCl 4 The powder is ground and mixed with a mortar and placed in a quartz tube that has been pickled and dried. After the quartz tube containing the above growth materials is vacuum-sealed, it is placed in a high-temperature tube furnace with two temperature zones and transported by chemical vapor phase. The temperature of the growth end is 500°C, the temperature of the raw material end is 600°C, grow for 10 days under this temperature gradient, and finally cool naturally to room temperature to obtain high-quality Cu 2 Se 0.95 Cl 0.05 Crystals, about 1.5mm in largest dimension.

Embodiment 3

[0030] Weigh 1.1g of Cu 2 Se and 100mg of TeBr 4 The powder is ground and mixed with a mortar and placed in a quartz tube that has been pickled and dried. After the quartz tube containing the above growth materials is vacuum-sealed, it is placed in a high-temperature tube furnace with two temperature zones and transported by chemical vapor phase. The temperature of the growth end is 550°C, the temperature of the raw material end is 650°C, grow for 10 days under this temperature gradient, and finally cool naturally to room temperature to obtain high-quality Cu 2 Se 0.97 Br 0.03 Single crystal, the largest dimension is about 1.5mm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
diameteraaaaaaaaaa
thermoelectric figure of meritaaaaaaaaaa
Login to View More

Abstract

The invention discloses a growth method for a high-quality Cu2Se(1-x)Ax crystal. The method comprises the following steps: (1) preparing raw materials, namely weighing a certain amount of Cu2Se powder, adding TeCl4, TeBr4 or I2 powder as a transportation agent and a doping agent, grinding and mixing uniformly by a mortar, adding the raw materials into a clean high-temperature-resistant quartz tube, and sealing by gas flames in a vacuum state for later use; (2) crystal growth, namely adding the quartz tube sealed in the step (1) into a two-temperature-zone or multi-temperature-zone tube furnace, and setting a growth temperature, thereby obtaining the Cu2Se(1-x)Ax crystal by virtue of growth in a certain cycle, wherein A is Cl, Br or I. The growth method for the Cu2Se(1-x)Ax crystal providedby the invention has the advantages of being simple in growth equipment, low in cost, high in quality of the grown crystal, large in size and the like.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a method for growing high-quality Cu 2 Se (1-x) A x (A = Cl, Br, I) crystal method. Background technique [0002] Cuprous selenide (Cu 2 Se) belongs to transition metal chalcogenides. In recent years, in the research of thermoelectric materials, solar materials, topological materials, and giant magnetoresistance materials, transition metal chalcogenides have attracted great attention in the field of materials and physics due to their rich physical properties and application value. It is well known that as the atomic number Z increases in transition metal elements, the electron-electron correlation (U) effect will weaken, but the spin-orbit coupling effect will increase. Variations of these two effects increase the possibility of tuning material properties, resulting in rich physical phenomena. Among them, silver chalcogenides (such as Ag 2 Te) have a giant magnetore...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B25/00
CPCC30B25/00C30B29/46
Inventor 吕洋洋陈思思陈延彬姚淑华陈延峰
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com