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Mask stack and method for patterning semiconductor thin film using mask stack

A thin-film pattern and mask technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as difficulty in precise control and damage to light-emitting elements, and achieve the effect of eliminating height differences and avoiding laser cutting.

Active Publication Date: 2020-04-10
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, violent cutting will seriously damage the light-emitting element, and it is difficult to control precisely

Method used

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  • Mask stack and method for patterning semiconductor thin film using mask stack
  • Mask stack and method for patterning semiconductor thin film using mask stack
  • Mask stack and method for patterning semiconductor thin film using mask stack

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Embodiment Construction

[0024] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., are only for reference The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by the same reference numerals.

[0025] The invention provides a mask plate combination and a method for patterning a semiconductor film by using the mask plate combination to realize a “Mediterranean” display structure on an OLED display screen. Below, the present invention will be described in detail with reference to the accompanying drawings.

[0026] see figure 2 and image 3 , the present in...

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Abstract

The invention provides a mask plate combination and a method for patterning a semiconductor thin film by using the mask plate combination. The reticle assembly includes a first reticle and a second reticle, wherein the first reticle includes a plurality of first light-shielding regions, a plurality of first light-transmitting regions, and at least one first light-shielding island , the first light-shielding island covers part of the first light-shielding area and the first light-transmitting area; the boundary of the first light-shielding island is not connected to the boundary of the mask plate; the second mask plate includes multiple A second light-shielding area, a plurality of second light-transmitting areas and at least one second light-shielding island, the second light-shielding island covers part of the second light-shielding area and the second light-transmitting area; the boundary of the second light-shielding island Not in contact with the boundary of the mask plate; the first light-shielding area and the second light-shielding area are complementary, and the first light-transmitting area and the second light-transmitting area are complementary; the first The light-shielding island and the second light-shielding island have the same shape and size, and are arranged overlapping each other.

Description

technical field [0001] The invention relates to the field of electronic display, in particular to a mask plate combination and a method for patterning a semiconductor thin film by using the mask plate combination. Background technique [0002] Since the OLED display device can realize display without a backlight, it has been widely used at present. At this stage, in the manufacturing process of small and medium-sized OLED panels, evaporation is a very important process link. In the evaporation process, the tool used for pattern definition is a metal mask, which can be divided into a precision metal mask and a general metal mask. Precision metal masks are used for pixel definition, mainly for R, G, B pixel layers and dopant material evaporation. The general metal mask is used for the definition of the common layer pattern, and is mainly used for the material evaporation of the electron injection layer, the hole injection layer, the electron transport layer and the hole tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/04C23C14/24H01L51/56H10K99/00
CPCC23C14/042C23C14/24H10K71/164H10K71/166H10K71/00H10K71/20H10K2102/301H10K2102/302
Inventor 孙朴
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD