Avalanche detector transition layer structure and preparation method

Abstract

The invention discloses an avalanche detector transition layer structure and a preparation method. Alternately graded InP and InGaAs(P) multilayer materials with the total thickness of ten-nanometer-magnitude are adopted between a ternary or quaternary InGaAs(P) layer matched with an InP lattice and a binary InP charge layer as a transition layer, so that the use of the traditional multilayer InGaAsP transition layer materials of different components which are not liable to grow are avoided. The transition layer is suitable for growing by adopting a molecular beam epitaxy method, the characteristic that the molecular beam epitaxy can accurately control the thickness can be fully exerted, the difficulty in growth of the material containing two V-group elements on the component control is reduced, and parameter adjustment and control can be conveniently carried out. The avalanche detector transition layer structure and the preparation method can also be popularized to other heterogeneousjunction transition layer materials growing by adopting molecular beam epitaxy and containing two different V-group elements.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials and devices, in particular to an avalanche detector transition layer structure and a preparation method. Background technique [0002] Avalanche Photodiode (APD) has higher sensitivity and detection rate than ordinary PN detectors due to its internal multiplication effect, and is especially suitable for the detection of weak optical signals. Applications. In the visible light band, silicon is often used as the avalanche detector for the absorbing layer. Due to the limitation of the band gap of the silicon material, the avalanche detector in the near-infrared band mainly uses III-V materials such as InGaAs(P) as the absorbing layer. For light detection near the wavelength of 1.1 microns, silicon and InGaAsP avalanche detectors have their own advantages and disadvantages. In lattice-matched InP substrate 0.53 Ga 0.47 The detector cut-off wavelength of As as the absorbing lay...

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Problems solved by technology

The composition of these three-layer materials needs to be precisely controlled, otherwise, the quality of the material will deteriorate if the lattice mismatch occurs due to the composition deviation, so it is necessary to perform multiple adjustments, explorations and test feedback before growing the full-structure material, which is very time-consuming

More importantly, when molecular beam epitaxy grows materials containing two V-group elements, As and P, the composition of V-group elements is affected by many factors, and the repeatability is not ideal, so it is difficult to avoid the three-layer InGaAsP The composition of the material deviates from the design value, which affects its transition effect, and is likely to produce negative effects such as material lattice mismatch, which affects the quality of the material

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