Rotary Tray Fixture

A technology of fixing device and rotating tray, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of tray tray shaking, substrate chip rupture, tray instability, etc., to reduce weight and achieve stability , the effect of reducing the radiation shielding area

Active Publication Date: 2020-10-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the process of material growth, in order to optimize the growth, the tray is usually set to rotate and heat. Rotation brings problems such as airflow vortex, which will cause the tray to be affected by the airflow and appear unstable. Heating may cause some problems in the tray. The force causes the pallet to shake
During the growth process, the tray will rotate at high speed. If the tray is not stable when the tray is rotating at a high speed, it will easily cause the tray to overturn, resulting in the rupture of the substrate and even the damage of the reaction chamber.

Method used

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Embodiment Construction

[0031] In order to improve the growth quality of thin film materials, it is necessary to improve the temperature uniformity of the tray and the uniform distribution of the gaseous source material on the surface of the tray. Generally, a motor is installed outside the reaction chamber, and the tray connected to the reaction chamber by the rotating shaft drives the tray to rotate at a low or high speed. Rotation brings problems such as airflow vortices, which will cause the tray to be affected by the airflow and become unstable. In the case of high-speed rotation, if the tray is not stable, it is easy to cause the tray to overturn, causing dangers such as rupture of the substrate and even damage to the reaction chamber.

[0032] As the heated body, the tray is currently heated by direct current radiation or alternating current induction. Radiation heating is divided into resistance wire heating and resistance sheet heating. Applying direct current to the resistance wire or resi...

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Abstract

The invention discloses a rotary tray fixed device. The rotary tray fixed device comprises a rotating shaft, a supporting claw and grooves, wherein the supporting claw is fixed to the rotating shaft and comprises an axis body and n claw arms; n is greater than or equal to 3; each claw arm is connected to the axis body; a boss is arranged at the tail end of each claw arm and realizes the placementof a tray to be placed in the supporting claw and the limitation of the tray in a plane direction of the tray; the boss at the tail end of each claw arm is correspondingly provided with a pressing block; the pressing block realizes the placement of the tray to be placed in the supporting claw and the limitation of the tray in a direction perpendicular to the plane of the tray; the pressing blocksand the bosses realize the stable fixation of the tray; and the grooves are formed in the claw arms of the supporting claw. The rotary tray fixed device realizes the firmness of the tray in a rotary process, is also conductive to reducing the influence of the inertia on the rotation and can increase the utilization rate of energy.

Description

technical field [0001] The disclosure belongs to the field of thin film material growth equipment manufacturing, and relates to a rotating tray fixing device. Background technique [0002] The growth of thin film materials is an important process step in the fields of semiconductor technology, microelectronics, etc., especially in the epitaxial growth of semiconductor materials, the growth technology of thin film materials is very critical to the performance of semiconductor devices. Metal-organic Chemical Vapor Deposition (MOCVD, Metal-organic Chemical Vapor Deposition) is a commonly used semiconductor thin film material growth equipment, especially suitable for large-scale production in the semiconductor industry. The most important equipment for compound semiconductors such as gallium oxide and zinc oxide. [0003] Metal-organic chemical vapor deposition uses organic compounds of group III and group II elements in the periodic table of elements and hydrides of group V an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458
CPCC23C16/4584C23C16/4586
Inventor 王晓亮姜丽娟王权徐健凯冯春肖红领李巍
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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