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Thin film transistor, its manufacturing method and electronic device

A technology for thin film transistors and manufacturing methods, which are applied in transistors, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as hump effect

Active Publication Date: 2020-12-01
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thin film transistors rely on the active layer to form a conductive channel to conduct, and the active layer tends to accumulate voltage in the edge area, causing the edge area to conduct earlier than the non-edge area, resulting in a hump effect

Method used

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  • Thin film transistor, its manufacturing method and electronic device
  • Thin film transistor, its manufacturing method and electronic device
  • Thin film transistor, its manufacturing method and electronic device

Examples

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no. 1 example

[0035] Figure 2A is a schematic top view structure diagram of the thin film transistor 200 according to the first embodiment of the present invention, Figure 2B for Figure 2A A schematic cross-sectional structure diagram of the middle thin film transistor 200 along the cross-section line C-C'.

[0036] Please also refer to Figure 2A and Figure 2B The thin-film transistor 200 of the bottom gate structure includes a gate 202, an auxiliary layer 203, a gate insulating layer 204, an active layer 205, a source 206, and a drain 207 that are sequentially stacked on a substrate 201, and the active layer 205 includes a The channel region 208 between the source 206 and the drain 207 , the channel region 208 includes an edge region 209 along the channel length direction and a body region 210 except for the edge region 209 . The auxiliary layer 203 is disposed between the gate 202 and the gate insulating layer 204 and is disposed corresponding to the edge region 209 of the channe...

no. 2 example

[0043] image 3 It is a schematic cross-sectional structure diagram of the thin film transistor 200 according to the second embodiment of the present invention. see image 3 The structure of the TFT of the second embodiment of the present invention is basically the same as that of the TFT of the first embodiment, and the only difference lies in the location and material of the auxiliary layer 203 . As shown in the figure, the auxiliary layer 203 is disposed between the active layer 205 and the gate insulating layer 204 . In this embodiment, the auxiliary layer 203 is an auxiliary active layer, and its material is a semiconductor material.

[0044] As shown in the figure, the auxiliary layer 203 is two auxiliary active layers arranged at intervals, and the two auxiliary active layers are respectively arranged corresponding to the two edge regions 209 of the channel region 208 . In another example, the auxiliary layer includes only one auxiliary active layer corresponding to ...

no. 3 example

[0048] Figure 4A is a schematic top view structure diagram of the thin film transistor 200 according to the third embodiment of the present invention, Figure 4B for Figure 4A A schematic cross-sectional structure diagram of the middle thin film transistor 200 along the D-D' section line. For convenience, the same elements are given the same numbers, and will not be described in detail below. Please also refer to Figure 4A and Figure 4B The thin film transistor 200 of the top-gate structure includes a source electrode 206 and a drain electrode 207, an active layer 205, a gate insulating layer 204, an auxiliary layer 203, and a gate electrode 202, which are sequentially stacked on a substrate 201. The active layer 205 includes a The channel region 208 of the gate insulating layer 204 , the channel region 208 includes an edge region 209 along the channel length direction and a body region 210 outside the edge region 209 . The auxiliary layer 203 is disposed between the ...

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Abstract

A kind of thin film transistor, its manufacturing method and electronic device, described thin film transistor comprises substrate, the gate that is arranged on described substrate, gate insulating layer, active layer and source electrode and drain electrode, and described active layer comprises a channel region located between the source and the drain, the channel region includes an edge region along the channel length direction and a body region other than the edge region, and the thin film transistor also includes a region located at the gate and an auxiliary layer between the active layer, the auxiliary layer at least partially overlaps with the projection of the edge region of the channel region on the substrate, and the auxiliary layer is used to improve the edge region of the channel region the turn-on voltage.

Description

technical field [0001] Embodiments of the present invention relate to a thin film transistor, a manufacturing method thereof, and an electronic device. Background technique [0002] A thin-film transistor (Thin-film Transistor, TFT) is an important element of some electronic devices, for example, a thin-film transistor is a switching element of a pixel circuit in an active display device. Thin film transistors rely on the active layer to form a conductive channel to conduct, and the active layer is easy to accumulate voltage in the edge area, causing the edge area to be turned on earlier than the non-edge area, resulting in a hump effect. Contents of the invention [0003] An embodiment of the present invention provides a thin film transistor, including a substrate, a gate disposed on the substrate, a gate insulating layer, an active layer, and a source and a drain, and the active layer includes and the channel region between the drain, the channel region includes an edge...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/41H01L21/336
CPCH01L29/41H01L29/66742H01L29/786H01L29/42384H01L29/4908G02F1/1368H01L27/1222H01L27/127H01L29/66765H01L29/78678H01L29/78696H10K59/1213
Inventor 王骏黄中浩赵永亮林承武
Owner BOE TECH GRP CO LTD
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