Preparation method for cesium-stannous halogen perovskite film material

A thin-film material and perovskite technology, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of unstable product performance, good crystal quality and optical quality, and limit cesium tin halide perovskite Material development and other issues, to achieve the effect of good crystal quality and optical quality, single crystal form

Inactive Publication Date: 2019-03-26
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0006] At present, the synthesis method of cesium tin halide perovskite materials is mainly prepared by solution method, but this method has high requirements on reaction conditions, and the performance of the obtained products is unstable, which limits the development of cesium tin halide perovskite materials. , therefore, to provide a method for efficiently synthesizing cesium tin halide perovskite materials, and to make the obtained products have good crystal quality and optical quality is a problem that needs to be solved at present

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  • Preparation method for cesium-stannous halogen perovskite film material
  • Preparation method for cesium-stannous halogen perovskite film material
  • Preparation method for cesium-stannous halogen perovskite film material

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[0029] The invention provides a method for preparing a cesium tin halide perovskite film material, which includes:

[0030] Combine CsX and SnX 2 Put the mixed powder and substrate of the CVD tube furnace into the CVD tube furnace, evacuate, then inject argon gas at 150-500 standard mL / min, and keep the pressure in the furnace chamber at 50-300Pa, and then heat the furnace chamber to Reaction at 500~800℃, and quenching after the reaction, to obtain cesium tin halide perovskite film material;

[0031] Wherein, the X is Cl, Br or I.

[0032] In the present invention, the CsX and SnX 2 The molar ratio of is preferably (0.3 to 1.2): (0.3 to 1.2), more preferably (0.5 to 1): (0.5 to 1), and most preferably (0.6 to 0.9): (0.6 to 0.9).

[0033] In the present invention, the present invention does not have special requirements for the type of CVD tube furnace, and all CVD tube furnaces known in the art can be used. Among them, the present invention has no special requirements for the method o...

Embodiment 1

[0041] The cesium halide and tin halide (CsBr and SnBr 2 ) Mix together at a molar ratio of 1:1 and grind to a uniform powder. The mixed powder is loaded into a ceramic boat and placed in a CVD tube furnace. The ITO substrate is placed in the downstream direction of the ceramic boat carrying the raw material powder in the tube furnace. Then, the air pressure in the tube furnace is pumped to 20 Pa with a mechanical pump, and then 300 standard ml / min of high-purity argon (99.99%) is introduced into the furnace cavity as the protective gas and carrier gas. After the argon gas is introduced, the pressure in the furnace cavity is maintained at 140 Pa. Increase the temperature in the tube furnace cavity to 700 at a rate of 25°C / min and keep it for 20 minutes. When the growth is completed, stop heating to cool down the furnace cavity naturally and maintain the growth airflow and air pressure. After the temperature in the furnace cavity drops to 380°C, the pressure in the furnace ca...

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Abstract

The invention provides a preparation method for a cesium-stannous halogen perovskite film material. The method comprises the steps of placing mixed powder of CsX and SnX<2> and a substrate in a CVD tube furnace, vacuumizing, and feeding argon gas at the standard rate of 150-500 mL / min; holding the air pressure in a furnace chamber for 50-300 Pa, and then heating the interior of the furnace chamberto 500-800 DEG C for reaction; quenching upon completion of reaction, so that the cesium-stannous halogen perovskite film material is obtained; and the result shows that the cesium-stannous halogen perovskite film material prepared with the method is single in crystal form, and has high crystal quality and optical quality.

Description

Technical field [0001] The invention relates to the technical field of semiconductor material design and growth, in particular to a method for preparing a cesium tin halide perovskite film material. Background technique [0002] As a rising star in the field of materials science in recent years, ABX 3 The structured perovskite material has a tunable bandwidth, ultra-fast charge generation rate, high and average electron / hole mobility and long carrier lifetime. Due to its excellent performance, based on organic-inorganic composite perovskite (CH 3 NH 3 PbX 3 , X=Cl, Br or I) The photoelectric conversion efficiency of solar cells of material has increased rapidly from 3.8% to 22.1% in the past few years, which has attracted wide attention and research interest of a large number of researchers. Compared with traditional semiconductor materials, perovskite is easier to rely on simple and economical preparation technology to achieve material properties such as narrow emission spectrum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/56
CPCC23C16/30C23C16/56
Inventor 王飞杨哲田灿灿王云鹏赵东旭崔迪
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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