SrHgGeSe4 nonlinear optical crystal as well as preparation and allocation thereof

A nonlinear optics and crystal technology, applied in the direction of nonlinear optics, optics, crystal growth, etc., can solve the problems of slow development of nonlinear crystals, low optical damage threshold, affecting practical use, etc., and achieve large nonlinear optical effects and physical Stable chemical performance, not easy to deliquescence effect

Inactive Publication Date: 2019-03-26
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se) The photodamage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the practical use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SrHgGeSe4 nonlinear optical crystal as well as preparation and allocation thereof
  • SrHgGeSe4 nonlinear optical crystal as well as preparation and allocation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The nonlinear optical crystal SrHgGeSe was prepared by spontaneous crystallization from high-temperature melt 4 crystal, comprising the steps of:

[0047] Weigh 8.33 g of SrSe, 13.98 g of HgSe and 11.53 g of GeSe 2 (i.e. SrSe:HgSe:GeSe 2 =0.05mol:0.05mol:0.05mol), after mixing evenly, put it into a quartz glass tube of Φ12mm×200mm, and evacuate to 10 -3 After that, it was packaged with an oxyhydrogen flame and placed in a tube growth furnace, slowly raised to 950°C, kept at a constant temperature for 72 hours, slowly cooled to room temperature at a rate of 1°C / h, and the tube growth furnace was closed; after the quartz tube cooled Cut to get Φ12mm×60mm yellow SrHgGeSe 4 crystals.

Embodiment 2

[0049] The nonlinear optical crystal SrHgGeSe was prepared by crucible descent method 4 crystal, comprising the steps of:

[0050] Weigh 33.32 g of SrSe, 55.92 g of HgSe and 39.45 g of GeSe 2 (Sr: Hg: Ge: Se = 0.2mol: 0.2mol: 0.2mol: 0.8mol), after mixing evenly, put it into a quartz glass tube of Φ25mm×200mm, and vacuumize it to 10 -3 After that, it is packaged with an oxygen-hydrogen flame and placed in a crystal growth furnace, and slowly raised to 950°C to melt the raw material. After the raw material is completely melted, the growth device drops vertically at a speed of 10mm / hour; after 5 days of crystal growth, the growth is completed , the growth device took 50 hours to cool down to room temperature, and obtained φ25×60mm yellow SrHgGeSe 4 Nonlinear Optical Crystals.

Embodiment 3

[0052] The nonlinear optical crystal SrHgGeSe was prepared by spontaneous crystallization from high-temperature melt 4 crystal, comprising the steps of:

[0053] Weigh powdered SrHgGeSe 4 The compound is put into a Φ10mm×100mm quartz glass tube and vacuumed to 10 -3 After that, it is packaged with a hydrogen-oxygen flame and placed in a tubular growth furnace, slowly raised to 1000°C, kept at a constant temperature for 24 hours, slowly cooled to room temperature at a rate of 10°C / h, and the tubular growth furnace is closed; after the quartz tube is cooled Cut to get φ10×60mm yellow SrHgGeSe 4 Nonlinear Optical Crystals.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a nonlinear optical crystal, which has a chemical formula of SrHgGeSe4, belongs to an orthorhombic system, and has a space group of Ama2, wherein cell parameters are that a isequal to 10.8345 angstroms, b is equal to 10.7441 angstroms, c is equal to 6.6392 angstroms, alpha is equal to beta, equal to gamma and equal to 90 degrees, and Z is equal to 4. The nonlinear opticalcrystal is a nonlinear optical crystal in an infrared band, and has the advantages of being large in nonlinear optical effect (4.9 times that of AgGaS2 in an equivalent condition), wide in light transmission waveband (0.5 mum to 18 mum), high in double refraction, capable of realizing type I and type II phase matching, good in mechanism property, easy to process, and the like. The invention also discloses a preparation method and application of the nonlinear optical crystal.

Description

technical field [0001] The invention relates to the field of nonlinear optical crystals. More specifically, a SrHgGeSe 4 Nonlinear optical crystals, their preparation and applications. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more useful wavelengths of laser light, so that the laser can be used more widely. According to the different application bands of materials, they can be ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B11/00G02F1/355
Inventor 姚吉勇郭扬武李壮邢文豪
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products