A kind of preparation method of nanowire array device

Abstract

The invention relates to a method for preparing a nanowire array device. The method prepares Al on a substrate for growing nanowires. x Ga 1‑x As thin film was used as sacrificial layer, and nanowires were grown on Al x Ga 1‑x On As, the PMMA material dissolved in acetone solution was used to spin-coat the surface of the nanowire sample to complete the immobilization of PMMA to the nanowire. Put the nanowire sample fixed by PMMA into the HF acid etching solution, and use HF acid to Al x Ga 1‑x As has a corrosive effect, but HF acid has no corrosive effect on GaAs, InAs, and PMMA, so that the Al on the surface of the substrate x Ga 1‑x As is etched away, GaAs nanowires and PMMA materials are completely retained without reacting with HF acid to obtain a migrateable GaAs or InAs nanowire array. Subsequently, a p-type metal electrode is prepared on the upper surface of the migratable nanowire array material, and an n-type metal electrode is prepared on the lower surface. After the electrode preparation is completed, the sample is soaked in acetone or toluene solution to remove PMMA, cleaned and air-dried naturally to obtain The GaAs or InAs nanowire array device solves the problem of technical difficulties in obtaining the nano-array device in the prior art.

Description

technical field [0001] The invention belongs to the field of new materials and novel nano-optoelectronic devices, in particular to a preparation method of a nano-wire array device in the field of nano-optoelectronic materials and devices. Background technique [0002] Nanomaterials are the research hotspots in the world today, and because of their special structure, they are widely used in nano-optoelectronic devices. But because of its unique electrical and optical properties, it can be used to prepare solar cells, optical switches, nano power generation, field effect transistors, light-emitting diodes, nano lasers, photodetectors and other devices, and has been rapidly developed in the fields of nanoelectronics and optoelectronics . Since the ordered array structure membrane battery module was proposed in 2002, the research on the structure based on the ordered array membrane battery module has attracted much attention. Loading the catalyst on the outside of the electron...

AI Technical Summary

Problems solved by technology

The nanowire array device is prepared by using the nanowire array material fixed by PMMA material, the p-type Ti / Au alloy metal electrode is prepared on the upper surface of the nanowire array material, and the n-type Ni / Au is prepared on the lower surface of the nanowire array material Alloy metal electrodes, n-type and p-type electrodes are prepared by magnetron sputtering technology, after the n-type and p-type electrodes are prepared, the prepared samples are soaked in acetone or toluene solution for 30-60 minutes, and then soaked with alcohol , deionized water for cleaning, and finally allow the sample to dry naturally to obtain a nanowire array device, which solves the difficult problem of obtaining a nanoarray device in the prior art. The method proposed by the present invention is simple to implement and can effectively obtain a nanowire array device

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