A light-emitting diode epitaxial wafer and its manufacturing method

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof and belongs to the technical field of a semiconductor. The light emitting diode epitaxial wafer includes a substrate, and a low temperature buffer layer, a high temperature buffer layer, an N type layer, a multi-quantum well layer, an electron blocking layer and a P type layer which are sequentially laminated on the substrate, wherein the multi-quantum well layer includes multiple InGaN quantum well layers and GaN quantum barrier layers which alternately grow, the multiple InGaN quantum well layers include multiple first InGaN quantum well layers adjacent to the P type layer, in the direction from the N type layer to the P type layer, thickness of the multiple first InGaN quantum well layers decreases layer by layer, the content of the In in the multiple first InGaN quantum well layers decreases layer by layer, so the polarization effect between the InGaN quantum well layers and the GaN quantum barrier layers in the multi-quantum well layer can be reduced, and thereby light emitting efficiency of LEDs is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes the substrate and the low-temperature buffer layer, high-temperature buffer layer, N-type layer, multi-quantum well layer, electron blocking layer and P-type layer. The N-type layer is doped with Si to provide electrons, and the P-type layer is doped with Mg to provide holes. When the current is injected into the G...

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Problems solved by technology

[0005] Since the multi-quantum well layer is composed of InGaN quantum well layers and GaN quantum barrier layers alternately arranged in multiple periods, the InGaN quantum well layers and GaN quantum barrier layers will generate stress due to lattice mismatch. As the period of the layer continues to increase, the stress between the quantum well layer and the quantum barrier layer will continue to accumulate, and the polarization effect between the InGaN quantum well layer and the GaN quantum barrier layer will become stronger and stronger, resulting in the wave function of electrons and holes Separation in spatial distribution, which reduces the luminous efficiency of the LED

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