Slurry composition for polishing tungsten barrier layer
A technology of barrier layer and composition, applied in the field of tungsten barrier layer polishing slurry composition, can solve the problems of semiconductor device influence, disconnection of wiring pattern, poor pattern shape, etc.
Active Publication Date: 2019-04-02
K C TECH
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Problems solved by technology
Therefore, problems such as poor shape of the formed pattern and disconnection of the wiring pattern may occur in the subsequent process, which will have a very serious impact on the semiconductor device
Method used
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[0054]
[0055] 1.5 wt% of colloidal silica polishing particles with a particle size of 65nm single size, and 0.02 wt% of cysteine (Cysteine) as an amino acid containing sulfur, and 0.03 wt% of ammonium phosphate as a pH buffer, and as The oxidizing agent and hydrogen peroxide 0.3wt% were mixed together, and then titrated with nitric acid at a pH of 2.5 to prepare a tungsten barrier layer polishing slurry composition.
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Abstract
The present invention relates to a slurry composition for polishing a tungsten barrier layer. A slurry composition for polishing a tungsten barrier layer according to an embodiment of the present invention comprises abrasive grains and a sulfur-containing amino acid, and can improve edge over erosion (EOE).
Description
technical field [0001] The invention relates to a polishing slurry composition for a tungsten barrier layer. technical background [0002] Chemical mechanical polishing CMP (Chemical Mechanical Polishg) process is a process in which the surface of a semiconductor wafer is brought into contact with a polishing pad to perform rotational motion, and at the same time, it is polished flat with a polishing agent and a slurry containing various compounds. CMP slurry can be classified according to the polishing object. Roughly divided into silicon oxide (SiO2) for polishing insulating layer 2 ) and other oxide film (oxide layer) polishing slurry, metal polishing slurry for polishing copper, tungsten, aluminum and other metal layers. In the process of polishing the metal layer with metal polishing slurry, the CMP process is divided into an initial step of polishing only the metal layer, a step of polishing the metal layer and barrier layer, and a step of polishing the metal layer, ...
Claims
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IPC IPC(8): C09G1/02C09K3/14C23F3/04
CPCC09G1/02C09K3/14C23F3/04H01L21/3212C09K3/1409C09K3/1454
Inventor 朴韩泰孔铉九李相美
Owner K C TECH
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