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Quartz glass crucible and manufacturing method thereof

A quartz glass crucible, quartz glass technology, applied in glass manufacturing equipment, manufacturing tools, glass molding and other directions, can solve the problems of cracks in the crystallized layer, easy breakage of the crucible wall, deformation of the crucible, etc.

Active Publication Date: 2021-10-26
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] However, if bubbles exist in or near the aluminum-containing layer, the gas (CO 2 , N 2 , O 2 or OH group) diffuses / expands into the surrounding air bubbles, causing foaming and peeling near the interface between the crystallized layer and the glass layer, which causes the crucible to deform.
Even when desorbed gas does not diffuse into bubbles, if the aluminum-containing layer is crystallized in a state containing bubbles, cracks are easily generated in the crystallized layer and the crucible wall is easily broken

Method used

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  • Quartz glass crucible and manufacturing method thereof
  • Quartz glass crucible and manufacturing method thereof
  • Quartz glass crucible and manufacturing method thereof

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Effect test

Embodiment

[0122] Quartz glass crucibles were produced by a rotary mold method, and their foaming tests were performed to evaluate whether or not foaming peeled off. As raw material quartz powder for the quartz glass crucible, natural quartz powder and aluminum-added quartz powder were prepared. The average particle size of the natural quartz powder is about 400 μm, and the average aluminum concentration in the state dissolved in hydrofluoric acid is 20 ppm.

[0123] Aluminum-added quartz powder was produced by subjecting this natural quartz powder to an aluminum-adding treatment. In the aluminum addition process, the natural quartz powder was mixed with diethylalumina in a non-oxygen atmosphere, and then held in a non-oxygen atmosphere at 600° C. for 5 hours to fix aluminum on the natural quartz powder. The average concentration of aluminum in the state where this aluminum-added quartz powder was dissolved in hydrofluoric acid was 100 ppm.

[0124] Next, the aluminum concentration dis...

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Abstract

The present invention provides a quartz glass crucible capable of withstanding a very long-time single crystal pulling process such as multiple times of pulling, and a manufacturing method thereof. The quartz glass crucible (1) has: a high aluminum content layer (14B) made of quartz glass having a relatively high average concentration of aluminum and arranged to constitute the outer surface (10b) of the quartz glass crucible (1); and a low aluminum content layer (14A), made of quartz glass with an average aluminum concentration lower than that of the high-aluminum content layer (14B), and arranged inside the high-aluminum content layer (14B), the low-aluminum content layer (14A) consists of The opaque layer (11) made of quartz glass, the high aluminum content layer (14B) is made of transparent or translucent quartz glass with a lower bubble content than the opaque layer (11).

Description

technical field [0001] The present invention relates to a quartz glass crucible used in the manufacture of single crystal silicon based on the Czochralski method (hereinafter referred to as "CZ method") and a manufacturing method thereof, in particular to a method for improving the strength of the quartz glass crucible structure and method of manufacture. Background technique [0002] Quartz glass crucibles are used in the production of silicon single crystals by the CZ method. In the CZ method, a polycrystalline silicon raw material is heated and melted in a quartz glass crucible, and a seed crystal is dipped in the molten silicon in a rotating crucible, and then the seed crystal is gradually pulled to grow a single crystal. In order to manufacture high-quality silicon single crystals for semiconductor devices at low cost, it is preferable not only to increase the yield of single crystals through a single pulling process, but also to be able to pull multiple silicon single...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C03B20/00C30B15/10
CPCC30B15/10C30B29/06C03B19/09C03B20/00C03B19/095C03B2201/32
Inventor 岸弘史福井正德
Owner SUMCO CORP