Atomic layer deposition equipment

Abstract

The invention discloses atomic layer deposition equipment. The atomic layer deposition equipment comprises a reaction chamber, a main air inlet pipeline, a supply source bottle, a recycling source bottle and a control device, wherein the main air inlet pipeline is connected with the reaction chamber, the supply source bottle and the recycling source bottle are respectively connected to the main air inlet pipeline, and the control device is used for controlling the temperature of the supply source bottle and the recycling source bottle. When the main air inlet pipeline is opened, a first precursor is provided by the supply source bottle, and carrier gas carried with the first precursor is introduced into the reaction chamber through the main air inlet pipeline; when the main air inlet pipeline is closed, the supply source bottle communicates with the recycling source bottle through a recycling pipeline, and the first precursor which is provided by the supply source bottle is condensed and recycled by the recycling source bottle, so that the precursor is recycled and stored.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and more particularly relates to an atomic layer deposition equipment. Background technique [0002] Tantalum nitride (Tantalum nitride, TaN) has high thermal stability, high melting point, excellent conductivity and adhesion, making it a good barrier material in the IC field, such as copper Copper diffusion barrier. [0003] Physical Vapor Deposition (Physical Vapor Deposition, PVD) and Chemical Vapor Deposition (Chemical Vapor Deposition, CVD) are the main methods of depositing TaN thin films. However, compared with the traditional thin film deposition technology, atomic layer deposition (ALD) has attracted people's attention because of its many advantages such as precise film control, excellent uniformity, high step coverage and dense film. Especially with the reduction of the feature size of the device and the continuous improvement of the aspect ratio of the hol...

AI Technical Summary

Problems solved by technology

[0006] The existing atomic layer deposition equipment has the following deficiencies: In the ALD deposition reaction, in order to ensure the good fluidity of the precursor and prevent the amount of the precursor passing into the reaction chamber from fluctuating due to the pressure of the gas flow , affecting the quality of the prepared film

In the process, the precursor is often passed into the reaction chamber when the precursor deposition is required, and the process method is directly discharged into the vacuum pump when the precursor deposition is not required, which greatly increases the consumption of the precursor and increases the cost of industrial production.

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