Reproducible manufacturing method for increasing the wavelength of mass-produced MOCVD gallium nitride LED

Abstract

The invention relates to a reproducible manufacturing method for increasing the wavelength of a mass-produced MOCVD (Metal-Organic Chemical Vapor Deposition) gallium nitride LED. The method comprisesthe steps of: S1, providing a substrate, and growing a buffer layer on the substrate; S2, growing an undoped GaN layer and an N-GaN layer in order on the buffer layer from top to bottom; S3, growing amulti-quantum well structure layer on the N-GaN layer, wherein the multi-quantum well structure layer is composed of a plurality of sets of periodically stacked grown InGaN layers and GaN layers, inthe process of grown of the InGaN layers, the concentration of In is regulated to a saturated state, and the growth temperature is regulated to modulate the required wavelength of the gallium nitrideLED; S4, growing a P-type electron blocking layer on the multi-quantum well structure layer; S5, growing a P-GaN layer on the P-type electron blocking layer; and S6, growing a P+GaN layer on the P-GaNlayer. The reproducible manufacturing method can effectively reduce the instability and can improve the repeatability of the wavelength.

Description

Technical field [0001] The invention relates to a method for preparing a light emitting diode (LED), in particular to a method for improving the repeatability of the wavelength of a mass-produced MOCVD gallium nitride LED, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] InGaN (indium gallium nitride) is a third-generation material, mainly used in optoelectronic devices and high-temperature, high-frequency, and high-power devices. The InxGa1-xN ternary material can continuously adjust the band gap from 0.7eV (InN) to 3.4eV (GaN) by adjusting the In composition, which can modulate the band from ultraviolet light to near-infrared light. The wavelength of the mass-produced MOCVD (Metal-Organic Chemical Vapor Deposition) multiple quantum well InGaN / GaN material is related to the width of the well, the growth temperature and the In concentration, and due to the growth characteristics of the MOCVD machine , The temperature is controlled ...

AI Technical Summary

Problems solved by technology

The wavelength of the mass-produced MOCVD (Metal-Organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition) multiple quantum well InGaN / GaN material is related to the width of the well, the growth temperature and the concentration of In, and due to the growth characteristics of the MOCVD machine , the temperature is detected and controlled according to the reflectivity, and is easily affected by other external factors such as the growth substrate and the use of a large plate, resulting in a decrease in the repeatability of the wavelength

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