A surface-enhanced Raman substrate and its preparation method
A surface-enhanced Raman and substrate technology, applied in Raman scattering, instrumentation, vacuum evaporation coating, etc., can solve the problem that the resolution of laser thermal processing needs to be improved, and achieve the effect of simple method, small size and short process
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Embodiment 1
[0072] In this embodiment, a surface-enhanced Raman substrate is prepared according to the following method:
[0073] (1) Depositing indium with a power magnetron sputtering of 40W on a glass substrate to obtain an indium nanofilm, the thickness of the indium nanofilm is 15nm;
[0074] (2) performing raster-scanning laser beam irradiation on the indium nanofilm described in step (1), to obtain an indium nanofilm containing nanopores;
[0075] Wherein, the power of the laser beam irradiation is 100mW, the laser pulse width is 1000ns, and the laser wavelength is 405nm;
[0076] (3) Depositing a silver nanofilm with a thickness of 10 nm by magnetron sputtering with a power of 40 W on the indium nanofilm containing nanopores described in step (2), to obtain the surface-enhanced Raman substrate.
[0077] The surface-enhanced Raman substrate prepared in this embodiment includes an indium nanofilm containing nanopores and a silver nanofilm deposited on the surface of the indium nano...
Embodiment 2
[0086] In this embodiment, a surface-enhanced Raman substrate is prepared according to the following method:
[0087] (1) Deposit indium on a glass substrate by magnetron sputtering with a power of 40W to obtain an indium nanofilm, and the thickness of the indium nanofilm is 10nm;
[0088] (2) performing raster-scanning laser beam irradiation on the indium nanofilm described in step (1), to obtain an indium nanofilm containing nanopores;
[0089] Wherein, the power of the laser beam irradiation is 50mW, the laser pulse width is 500ns, and the laser wavelength is 405nm;
[0090](3) Depositing an aluminum nanofilm with a thickness of 10 nm by magnetron sputtering with a power of 60 W on the indium nanofilm containing nanopores described in step (2), to obtain the surface-enhanced Raman substrate.
[0091] The surface-enhanced Raman substrate prepared in this embodiment includes an indium nanofilm containing nanopores and an aluminum nanofilm deposited on the surface of the indi...
Embodiment 3
[0094] In this embodiment, a surface-enhanced Raman substrate is prepared according to the following method:
[0095] (1) Depositing indium with a power magnetron sputtering of 60W on a quartz substrate to obtain an indium nanofilm, the thickness of the indium nanofilm is 25nm;
[0096] (2) performing raster-scanning laser beam irradiation on the indium nanofilm described in step (1), to obtain an indium nanofilm containing nanopores;
[0097] Wherein, the power of the laser beam irradiation is 150mW, the laser pulse width is 2000ns, and the laser wavelength is 405nm;
[0098] (3) A gold nanofilm with a thickness of 15 nm is deposited on the indium nanofilm containing nanopores with a power of 60 W by magnetron sputtering in step (2), to obtain the surface-enhanced Raman substrate.
[0099] The surface-enhanced Raman substrate prepared in this example includes an indium nanofilm containing nanopores and a gold nanofilm deposited on the surface of the indium nanofilm containin...
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