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Graphene-based high-emissivity infrared emission film and preparation method thereof

A technology of infrared emission and high emissivity, applied in the field of far infrared, can solve problems such as waste of materials, complex process requirements, and time-consuming

Active Publication Date: 2019-04-12
CHONGQING GRAPHENE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, roughening multi-layer graphene in this way is not only time-consuming, but also a waste of materials, and the process requirements are complex

Method used

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  • Graphene-based high-emissivity infrared emission film and preparation method thereof
  • Graphene-based high-emissivity infrared emission film and preparation method thereof
  • Graphene-based high-emissivity infrared emission film and preparation method thereof

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Embodiment 1

[0040] see figure 1 , is a schematic structural view of an embodiment of a graphene-based high-emissivity infrared emission film of the present invention. Specifically, the infrared emitting film of this embodiment includes a transparent substrate 1 , a graphene composite layer 2 , an electrode layer 3 and an encapsulation layer 4 which are sequentially stacked from bottom to top.

[0041]In this embodiment, the graphene composite layer 2 includes an adhesive layer 21 and a graphene layer 22, wherein the graphene layer 22 is grown on a roughened catalytic substrate by CVD, and The prepared graphene layer is transferred to the transparent substrate 1 through a liquid adhesive, thereby obtaining a graphene composite layer 2 composed of the graphene layer 22 and an adhesive layer 21 formed by curing the liquid adhesive. , and during the curing process of the adhesive layer 21 forming the graphene composite layer 2, the rough texture on the catalytic substrate is completely repro...

Embodiment 2

[0049] In order to more clearly illustrate the structure of a graphene-based high-emissivity infrared emission film of the present invention, a detailed description will be given below in conjunction with its preparation method. see Figure 4 , is a flowchart of an embodiment of a method for preparing a graphene-based high-emissivity infrared emission film of the present invention, specifically, it includes steps:

[0050] S11, roughening the growth substrate / catalytic substrate.

[0051] In this embodiment, the growth substrate (that is, the catalytic substrate) is copper foil, and the copper foil can be roughened by high temperature annealing treatment, physical mechanical polishing, chemical selective etching and other methods. In a specific embodiment, the copper foil is roughened by high-temperature annealing treatment combined with chemical micro-etching, and the step of roughening the growth substrate specifically includes the steps:

[0052] I. Under the vacuum condi...

Embodiment 3

[0069] The preparation method of this graphene-based high-emissivity infrared emission film in the present embodiment comprises each step in the above-mentioned embodiment two, and identical step adopts identical reference sign, does not repeat them here, but difference is:

[0070] In this embodiment, when the high-temperature annealing method combined with the chemical micro-etching method is used to roughen the copper foil, the substrate copper foil is heated to 950°C in the growth chamber under a vacuum condition of 150Pa, and the Protective gas, continue heating for 30min; raise the temperature of the substrate copper foil to the annealing temperature of 1080°C, and reduce the vacuum to 50Pa, and continue annealing for 10min; then, immerse the annealed substrate copper foil in a sulfuric acid / hydrogen peroxide solution with a concentration of 2wt% , etch at room temperature for 10 minutes, then wash and dry to obtain a roughened growth substrate.

[0071] The average roug...

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Abstract

The invention discloses a graphene-based high-emissivity infrared emission film and a preparation method thereof. The graphene-based high-emissivity infrared emission film comprises a transparent substrate, a roughened graphene composite layer, an electrode layer and a packaging layer which are sequentially stacked from bottom to top, wherein the graphene composite layer is a composite layer formed by an adhesive layer formed by curing a liquid adhesive and a graphene thin film when the graphene thin film which grows on a rough processed catalytic substrate is transferred to the transparent substrate through the liquid adhesive; the adhesive layer completely copies rough lines on the catalytic substrate; and the roughness of the graphene composite layer is 0.5-40 [mu]m. The graphene composite layer is formed when the graphene thin film which grows on the rough processed catalytic substrate is transferred to the transparent substrate by the liquid adhesive, so that the specific surfacearea and the surface roughness of the graphene composite layer are obviously improved, thereby improving the emissivity of the infrared emission film.

Description

technical field [0001] The invention relates to the field of far-infrared technology, in particular to a graphene-based high-emissivity infrared emission film and a preparation method thereof. Background technique [0002] As we all know, infrared light is an invisible light with a wavelength between 760nm and 1000μm. It is an electromagnetic wave with strong heating effect; the heat of the sun is mainly transmitted to the earth through infrared rays. In the field of medicine, it is believed that far-infrared rays of 8-15 μm are essential factors for biological survival. People call this waveband "life light wave"; The water molecules of the cells in the living body produce the most effective resonance, effectively promoting the growth of animals and plants. For the human body, far-infrared rays can expand capillaries, promote blood circulation, strengthen metabolism, increase tissue regeneration, and improve the body's immunity. [0003] People have been actively developi...

Claims

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Application Information

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IPC IPC(8): H05B3/20H05B3/03H05B3/14A61N5/06C01B32/186C01B32/194
CPCA61N5/0625A61N2005/0659C01B32/186C01B32/194H05B3/03H05B3/145H05B3/20
Inventor 王仲勋马金鑫姜浩徐鑫张雪峰史浩飞
Owner CHONGQING GRAPHENE TECH
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