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Silicon-containing atomic oxygen resistant polyimide film composition and preparation method thereof

A technology of oxygen polyimide and polyimide, which is applied in the field of atomic oxygen resistant polyimide film composition and its preparation, can solve the problems of satellite temperature rise and power supply power drop, and achieve good mechanical properties and The effects of good electrical properties, good adhesion, and good space environment stability

Active Publication Date: 2019-04-19
SHANGHAI INST OF SATELLITE EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The on-orbit monitoring and telemetry data of many low-orbit satellites in my country show that the functions of satellite thermal control and solar cells gradually degrade with the prolongation of on-orbit working time, resulting in an increase in satellite temperature and a decrease in power supply

Method used

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  • Silicon-containing atomic oxygen resistant polyimide film composition and preparation method thereof
  • Silicon-containing atomic oxygen resistant polyimide film composition and preparation method thereof
  • Silicon-containing atomic oxygen resistant polyimide film composition and preparation method thereof

Examples

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Embodiment 1

[0030] This embodiment relates to a novel atomic oxygen resistant polyimide film composition and a preparation method thereof.

[0031] The structure of the novel atomic oxygen resistant polyimide film material prepared in this embodiment is as follows: figure 1 As shown, the three-layer structure is divided into three regions from the outside to the inside, and the protective layer is continuous SiO 2 Protective structure, transition layer is SiO 2 Interpenetrating network structure with polyimide, base layer is SiO 2 doped structure.

[0032] The new atomic oxygen-resistant polyimide film material prepared in this example adopts the interpenetrating network structure of polyimide and silicon dioxide. The entire protective structure is rooted in the polyimide through mechanical interlocking, The integrated design and preparation of imide film, the atomic oxygen resistant polyimide film has the advantages of compact structure and no cracking, etc., and realizes the suppress...

Embodiment 2

[0048] This embodiment relates to a novel atomic oxygen-resistant polyimide film composition and a preparation method thereof, which is basically the same as in Embodiment 1, except that:

[0049] The polyimide system used in this example is 6FDA / ODA system.

[0050] The atomic oxygen resistant polyimide film material obtained in this embodiment includes a base film layer, a transition layer and a surface protection layer arranged in sequence; the base film layer includes a modified polyimide matrix and nano-SiO 2 filler; the transition layer is an interpenetrating network structure of Si-O-Si and polyimide; the surface protection layer is a pure silicon dioxide layer. In the base film layer, the modified polyimide matrix and nano-SiO 2 The mass ratio of the filler is 8:2. In the transition layer, the mass ratio of Si—O—Si to polyimide is 7:3.

[0051] After testing, the properties of the novel atomic oxygen-resistant polyimide film material prepared in this embodiment are ...

Embodiment 3

[0060] This embodiment relates to a novel atomic oxygen-resistant polyimide film composition and a preparation method thereof, which is the same as in Embodiment 1, except that:

[0061] The polyimide system used in this embodiment is the BPDA / PDA system.

[0062] The atomic oxygen resistant polyimide film material obtained in this embodiment includes a base film layer, a transition layer and a surface protection layer arranged in sequence; the base film layer includes a modified polyimide matrix and nano-SiO 2 filler; the transition layer is an interpenetrating network structure of Si-O-Si and polyimide; the surface protection layer is a pure silicon dioxide layer. In the base film layer, the modified polyimide matrix and nano-SiO 2 The mass ratio of the filler is 1:9. In the transition layer, the mass ratio of Si—O—Si to polyimide is 8:2.

[0063] After testing, the properties of the novel atomic oxygen-resistant polyimide film material prepared in this embodiment are as ...

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Abstract

The invention provides a silicon-containing atomic oxygen resistant polyimide film material and a preparation method thereof. The film material comprises a base film layer, a transition layer and a surface protective layer, which are arranged in sequence. The base film layer comprises a modified polyimide substrate and a nano-SiO2 filler; the transition layer is a Si-O-Si and polyimide interpenetrating network structure; and the surface protective layer is a pure silicon dioxide layer. According to the atomic oxygen resistant polyimide film prepared by the invention, the color is pale yellow;the thickness is 50-80 microns; tensile strength is greater than or equal to 200 MPa; insulating strength is greater than or equal to 230 V / microns; the total atomic oxygen accumulation is 7.83*1022 atom / cm<2>; mass loss rate after 10 years of operation in the earth orbit is less than or equal to 10%, and the optical performance change is less than or equal to 10%. After the coating undergoes 100high-low temperature thermal cycle tests of minus 100 to 100 DEG C, the coating has no obvious crack but has stable optical performance and good mechanical properties.

Description

technical field [0001] The invention relates to the technical field of thermal control materials, in particular to a silicon-containing atomic oxygen-resistant polyimide film composition and a preparation method thereof. Background technique [0002] As a commonly used polymer material for spacecraft, polyimide film is widely used in various spacecraft solar cell substrates, thermal control coatings, and circuit insulation protection. The on-orbit monitoring and telemetry data of many low-orbit satellites in my country show that the functions of satellite thermal control and solar cells gradually degrade with the prolongation of on-orbit working time, resulting in an increase in satellite temperature and a decrease in power supply. Through analysis, it is found that the main reason for these conditions is that the polyimide film material used is damaged by atomic oxygen erosion. Therefore, the stability of polyimide in the low-orbit environment has become an important facto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L79/08C08K3/36C08J7/00C08J7/14
CPCC08J7/08C08J7/14C08J2379/08C08K3/36C08K2201/011
Inventor 周博刘刚徐骏曹康丽李瑜婧潘阳阳苏京
Owner SHANGHAI INST OF SATELLITE EQUIP
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