Array substrate, preparation method thereof, and display device

Abstract

The invention provides an array substrate, a preparation method thereof and a display device. Low-temperature polycrystalline silicon comprises a base layer, a low-temperature polycrystalline siliconlayer, a grid electrode insulating layer, a grid electrode and an interlayer dielectric layer. The low-temperature polycrystalline silicon layer is arranged above the base layer, and the grid electrode insulating layer is disposed on the low-temperature polycrystalline silicon layer in a coating manner. The grid electrode is arranged on the grid electrode insulating layer, and the interlayer dielectric layer is coated on the grid electrode and the grid electrode insulating layer. According to the preparation method of the array substrate, the low-temperature polycrystalline silicon layer is hydrogenated before the interlayer dielectric layer is deposited, and the interlayer dielectric layer is directly deposited in the hydrogenated high-temperature environment, so that a rapid thermal annealing activation process in the prior art is omitted, the industrial process is reduced, and the energy and the cost are saved. The display device adopts the array substrate, and has the advantages ofhigh resolution, high reaction speed, high brightness, high aperture ratio, low energy consumption and the like.

Description

Technical field [0001] The invention relates to the field of display, in particular to an array substrate, a preparation method thereof, and a display device. Background technique [0002] Thin Film Transistor (TFT) is an important driving element in current liquid crystal display devices (LiquidCrystal Display, LCD) and Active Matrix Organic Light-Emitting Diode (AMOLED) , Is directly related to the display performance of the flat panel display device. [0003] Thin film transistors have a variety of structures, and there are also various materials for preparing thin film transistors with corresponding structures. Low temperature poly-silicon (LTPS) is one of the more excellent ones. Low-temperature polysilicon is a branch of polycrystalline silicon (p-Si). Low-temperature polysilicon has high electron mobility, which can effectively reduce the area of ​​the thin film transistor device, thereby increasing the aperture ratio of the pixel, increasing the display brightness of the ...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide an array substrate, its preparation method, and a display device, so as to solve the above-mentioned problems in the prior art that the manufacturing industry of the array substrate is complicated and the cost is high.

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