A light-emitting diode epitaxial wafer and its manufacturing method
A technology of light-emitting diodes and manufacturing methods, applied in chemical instruments and methods, nano-optics, crystal growth, etc., can solve the problems of the effective utilization of light to be improved, the loss of light, etc., to achieve improved effective utilization, good electrical conductivity, Increase the effect of positive light
Active Publication Date: 2021-04-23
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0008] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and a manufacturing method thereof, which can solve the problems in the prior art that the loss of light is large and the effective utilization rate of light needs to be improved
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[0032] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0033] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the LED epitaxial wafer includes a substrate 10 , a buffer layer 20 , an N-type semiconductor layer 30 , an active layer 40 , a P-type semiconductor layer 50 and a reflective layer 60 .
[0034] In this embodiment, the buffer layer 20 , the reflective layer 60 , the N-type semiconductor layer 30 , the active layer 40 and the P-type semiconductor layer 50 are sequentially stacked on the substrate 10 . The reflective layer 60 includes a plurality of boron thin films stacked in sequence.
[0035]...
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Abstract
The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a reflective layer, and the buffer layer, the N-type semiconductor layer, the active layer, and the P-type semiconductor layers are stacked on the substrate in sequence, the reflective layer includes a plurality of boron thin films stacked in sequence, and the reflective layer is arranged between the buffer layer and the N-type semiconductor layer. In the present invention, a reflective layer is formed by using a plurality of boron thin films stacked in sequence. The overall thickness of the reflective layer is relatively thin, and the influence on epitaxial growth can be ignored. Therefore, the reflective layer can be arranged between the buffer layer and the N-type semiconductor layer, thereby The path of light from the active layer to the reflective layer is greatly reduced, the loss of light on the transmission path is effectively reduced, and the effective utilization rate of light is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the su...
Claims
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IPC IPC(8): H01L33/46H01L33/00B82Y20/00C30B23/02
CPCB82Y20/00C30B23/02H01L33/007H01L33/46H01L2933/0025
Inventor 郭炳磊葛永晖吕蒙普李鹏
Owner HC SEMITEK ZHEJIANG CO LTD