detection circuit and method for sensing processor NBTI effect delay

A detection circuit and processor technology, which is applied in the direction of single semiconductor device testing, faulty computer hardware detection, etc., can solve problems such as processor circuit aging failure, circuit delay, etc., achieve flexible structure and frequency adjustment, and reduce dynamic power consumption, the effect of simple structure

Active Publication Date: 2019-05-17
JIANGNAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a detection circuit and method for sensing processor NBTI effect delay, through aging detection module, and non- Gate NAND3 converts the signal reversal information output by the critical path of the processor into a pulse signal, and processes and calculates the pulse signal through the aging measurement module to measure the delay of the critical path, which can accurately reflect the specific aging state of the processor. Provide fine-grained information for protection

Method used

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  • detection circuit and method for sensing processor NBTI effect delay
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  • detection circuit and method for sensing processor NBTI effect delay

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Embodiment 1

[0034] Embodiment 1: as attached figure 1 As shown, a detection circuit for sensing processor NBTI effect delay in Embodiment 1 includes an aging detection module 1 and an aging measurement module 2, and the input end of the aging detection module 1 is connected to the output end of the critical path of the processor , the output end of the aging detection module 1 is connected to the input end of the aging measurement module 2 through two multiplexers 3, and the output end of the aging measurement module 2 outputs the delay amount of the critical path of the processor;

[0035] It also includes a control module 4 which is connected to the aging detection module 1 , the aging measurement module 2 and the multiplexer 3 respectively.

[0036] as attached figure 2 with image 3As shown, the aging detection module 1 includes a master latch D1, a slave latch D2, a slave latch D3, an inverter NOT1, an inverter NOT2, a NAND gate NAND1, a NAND gate NAND2 and a NOT gate NAND3, the ...

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Abstract

The invention belongs to the field of high-performance processor reliability. The invention relates to a detection circuit for sensing NBTI effect delay of a processor. The device comprises an aging detection module and an aging measurement module. The device is characterized in that the input end of the aging detection module is connected with the output end of a processor key path, the output end of the aging detection module is connected with the input end of the aging measurement module through a multiplexer, and the output end of the aging measurement module outputs the delay amount of the processor key path; The signal overturning information output by the key path of the processor is converted into the pulse signal through the aging detection module, the pulse signal is processed and calculated through the aging measurement module, the delay amount of the key path is measured, the specific aging state of the processor can be accurately reflected, and fine-grained information isprovided for protection.

Description

technical field [0001] The invention relates to a processor detection circuit and a method thereof, in particular to a detection circuit and a method for sensing processor NBTI effect delay, and belongs to the field of high-performance processor reliability. Background technique [0002] According to the forecast of the International Semiconductor Technology Blueprint, with the shrinking process size, circuit aging caused by negative bias temperature instability (NBTI) will gradually become a key factor affecting chip reliability and reducing chip service life. Due to the NBTI effect, the threshold voltage ΔV of the PMOS TH As much as +100 mV, resulting in an increase in the overall delay of the data path, resulting in errors. For microprocessing in aerospace, automotive electronics and other systems, its life cycle is extremely long (more than 10 years), and the working environment is even worse. Long-term high temperature, high pressure, and high load work will accelerate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/22G01R31/26
Inventor 虞致国刘帅顾晓峰魏敬和
Owner JIANGNAN UNIV
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