Vertical graphene interconnection structure-based on-chip spiral inductor

A technology of spiral inductors and interconnection structures, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as poor thermal conductivity and electrical defects, and achieve the effects of reducing area, improving performance, and enhancing the overall inductance value

Inactive Publication Date: 2019-05-17
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the incomplete contact of the top electrodes, the multilayer horizontal graphene has certain defects in conductivity, and the thermal conductivity in the vertical direction is relatively poor.

Method used

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  • Vertical graphene interconnection structure-based on-chip spiral inductor
  • Vertical graphene interconnection structure-based on-chip spiral inductor
  • Vertical graphene interconnection structure-based on-chip spiral inductor

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with drawings and embodiments.

[0030] figure 1 It is a schematic diagram of multilayer horizontal graphene interconnection structure, which includes contact resistance Rc and multiple horizontal graphene layers. Due to the different manufacturing processes of materials, the value of contact resistance has a certain range of variation. from figure 1 It can be seen that this horizontal graphene interconnection can provide better reliability and stability than the traditional copper interconnection, but due to the low thermal conductivity in the vertical direction, there are certain problems in its heat dissipation.

[0031] figure 2 Schematic diagram of a multilayer vertical graphene interconnect structure, including contact resistance and multiple vertical graphene layers. from figure 2 It can be seen that this vertical graphene interconnection structure will greatly increase the rate of heat d...

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Abstract

The invention discloses a vertical graphene interconnection structure-based on-chip spiral inductor. Single-layer graphene is obvious in interconnection power consumption and multilayer graphene is bad in heat conductivity in vertical direction. The vertical graphene interconnection structure-based on-chip spiral inductor comprises a substrate, a second metal layer at the top of the base; a firstmetal layer at the top of the second metal layer, a first through hole transmission channel, a second through hole transmission channel and sixteen graphene interconnection lines located on the firstmetal layer and wound into four turns. Compared with the interconnection of single-layer graphene, the interconnection of multilayer vertical graphene embodies advantages when the width is relativelylarge; compared with copper interconnection, the on-chip spiral inductor decreases the signal transmission delay in integrated circuits so as to reduce the power consumption; and compared with horizontal graphene interconnection, the on-chip spiral inductor is capable of effectively solving the heat conduction problems in vertical direction due to characteristic anisotropy of graphene, and is crucial in application in new technology similar to three-dimensional integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, and in particular relates to an on-chip spiral inductance component based on a vertical graphene interconnection structure. Background technique [0002] More and more inductance elements are embedded in the current integrated circuit. In the prior art, an on-chip spiral inductor structure is generally used, that is, an inductance coil is made of a metal wire, and the internal port is separated from the metal layer through a through-hole transmission channel. lead out. It is usually necessary to increase the number of coils to obtain higher inductance values. The on-chip spiral inductor structure generally has the characteristics of small area, low power consumption, and easy integration. [0003] In recent years, graphene, as an emerging interconnect material, has received extensive attention due to its extraordinary physical properties. Compared with traditional copper interconnec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L23/532H01L21/768
Inventor 赵文生刘朋伟王晶胡月王高峰
Owner HANGZHOU DIANZI UNIV
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