Light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and an AlN buffer layer, a three-dimensional nucleation layer, a two-dimensional recovery layer, an undoped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer which are sequentially grown on the substrate, wherein the three-dimensional nucleation layer is a GaN layer; the light-emitting diode epitaxial wafer further comprises a BGaN buffer layer arranged between the AlN buffer layer and the three-dimensional nucleation layer; and the B component in the BGaN buffer layer is gradually reduced in the stacking direction of the light-emitting diode epitaxialwafer. By virtue of the BGaN buffer layer, lattice mismatch between the AlN buffer layer and the GaN epitaxial layer can be gradually reduced, the crystal quality of the grown epitaxial layer is improved, the warping of the epitaxial layer is optimized, and the wavelength uniformity of the LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED, and the existing GaN-based LED epitaxial wafer includes a sapphire substrate and a GaN epitaxial layer grown on the sapphire substrate. Due to the very serious lattice constant mismatch and thermal mismatch between GaN and sapphire substrate, a large number of dislocations and tensile stress will be introduced into the epitaxial layer. In order to reduce the effects ...

AI Technical Summary

Problems solved by technology

[0005] Since the lattice constant of the AlN material (about 0.453) is greater than that of the GaN material (about 0.437), there is still a lattice mismatch between AlN and GaN, and the GaN epitaxial layer grown on the AlN buffer layer will The introduction of a large number of dislocations and tensile stress makes the crystal quality of the grown epitaxial layer poor, and the epitaxial layer will warp, resulting in poor wavelength uniformity of the LED

Images