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Preparation method and application of total inorganic perovskite film

An inorganic calcium and thin-film technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problem of insufficient performance of light-emitting diodes, multi-surface defects of all-inorganic perovskite thin films, and limit the improvement of device performance and other issues, to save material and time costs, facilitate carrier recombination, improve brightness and efficiency

Inactive Publication Date: 2019-05-21
BEIJING JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the commonly used one-step method to prepare all-inorganic perovskite films usually has many surface defects, which will seriously limit the improvement of device performance.
In order to improve the film quality of inorganic perovskite films, existing methods often introduce additives into the perovskite precursor solution, which undoubtedly increases the complexity of the film and device preparation process
The two-step method can obtain a high-quality all-inorganic perovskite film, but the existing technology soaks the obtained lead source film in a cesium salt solution to slowly react to form a film, which not only consumes a lot of material and time costs, Moreover, the crystal grains of the film are large, and the performance of the light-emitting diode prepared by this method is far from the level of the one-step method.

Method used

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  • Preparation method and application of total inorganic perovskite film
  • Preparation method and application of total inorganic perovskite film
  • Preparation method and application of total inorganic perovskite film

Examples

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Embodiment 1

[0027] Reference now figure 1 , Given a kind of CsPbBr under nitrogen atmosphere 3 The preparation method of all-inorganic perovskite film specifically includes the following steps:

[0028] (1) Configure PbBr 2 Solution, PbBr 2 Dissolve in DMSO, the concentration is 100mg / ml, stir well to dissolve;

[0029] (2) Prepare the CsBr solution, dissolve CsBr in methanol with concentrations of 5, 10, and 15 mg / ml, and stir well until it dissolves;

[0030] (3) The solution obtained in step (1) was spin-coated on the substrate at 3000 rpm for 45 seconds, and then annealed at 80 degrees for 5 minutes to obtain PbBr 2 film;

[0031] (4) The three different concentration solutions obtained in step (3) were spin-coated on the PbBr obtained in step (2) at 2500 rpm. 2 On the film, the time is 45s, and then annealed at 80 degrees for 2 minutes to obtain CsPbBr 3 All inorganic perovskite film.

[0032] figure 2 Shown is the prepared PbBr 2 CsPbBr obtained by spin coating film and different concentrati...

Embodiment 2

[0034] We use the perovskite film obtained in Example 1 as the active light-emitting layer for the preparation of all-inorganic light-emitting diodes. The structure of the light-emitting diode device is ITO / PEDOT:PSS / CsPbBr 3 / Bphen / LiF / Ag, specifically including the following steps:

[0035] (1) Use special glass cleaner, deionized water, and alcohol to ultrasonically clean the ITO glass substrate in sequence, dry it with nitrogen after cleaning, and then treat the substrate with an ultraviolet ozone processor for 15 minutes;

[0036] (2) PEDOT:PSS was spin-coated on the glass substrate obtained in step (1) as a hole transport layer at 3500 rpm for 30 seconds, and then annealed at 150 degrees for 10 minutes;

[0037] (3) The substrate obtained in step (2) is transferred into a glove box in a nitrogen atmosphere to prepare the perovskite luminescent layer. The preparation method is the same as that in Example 1. The CsPbBr 3 The film is deposited on the hole transport layer PEDOT:PSS,...

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Abstract

The invention relates to a preparation method and application of a total inorganic perovskite film. The preparation method comprises steps of spin-coating a PbX2(X=Cl, Br, I) solution through a two-step spin-coating method and annealing to obtain a film, then, spin-coating a CsX solution onto a PbX2 film and annealing to obtain a CsPbX3 total inorganic perovskite film. The preparation method is simple to operate, and can prepare a uniform, compact total inorganic perovskite film; and the prepared total inorganic perovskite film can be used as an active luminescent layer in a total inorganic perovskite LED, so as to improve brightness and efficiency of devices effectively.

Description

Technical field [0001] The invention relates to the field of optoelectronic materials and devices, in particular to a method for preparing an all-inorganic perovskite film, and to a light-emitting diode prepared by using the film. Background technique [0002] All-inorganic perovskite materials have better water and oxygen resistance than organic-inorganic hybrid perovskite materials, so they have become the current academic research hotspot and are widely used in solar cells, light-emitting diodes and detectors. However, the commonly used one-step method to prepare all-inorganic perovskite films usually has many surface defects, which will severely limit the improvement of device performance. In order to improve the film quality of inorganic perovskite films, existing methods often introduce additives into the perovskite precursor solution, which undoubtedly increases the complexity of the film and device preparation process. The two-step method can obtain a high-quality all-in...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50H01L51/00
Inventor 吴淞全赵谡玲宋丹丹乔泊徐征
Owner BEIJING JIAOTONG UNIV
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