Packaging structure comprising at least one transition forming contactless interface

Abstract

The present invention relates to a packaging structure (100)comprising a split-block assembly with a first and a second conducting block section (10A, 20A) and at least one transition between a firstplanar transmission line (2A) and a second transmission line (11A), and one or more input / output ports. The first transmission line (2A) is arranged on a substrate, e.g. an MMIC (1A), disposed on thefirst conducting block section (10A) and comprises a coupling section (3A), the first conducting block (10A) comprises a cavity (4A) with a cavity opening in an upper surface of the first conducting block section (10A) so arranged that, in an assembled state of the split-block assembly, the coupling section (3A) will be located above, or in, the opening of the cavity (4A), the second transmissionline (11A) being in line with the first transmission line (2A) and located on an opposite side of the opening of the cavity (4A).The second conducting block section (20A) acts as a lid in an assembledstate of the packaging structure. One of the conducting block sections is provided with a high impedance surface (15A) in a transition region along or facing the first (2A) and second (11A) transmission lines, a narrow gap being provided between the high impedance surface region (15A) and the opposing surface of the other conducting block section (10A) at least in the transition region such thatthe transition will be contactless without any galvanic contact between the first and second transmission lines (2A, 11A).

Description

technical field [0001] The invention relates to an encapsulation structure having the features of the first part of claim 1, said encapsulation structure comprising at least one transition between a first transmission line and a second transmission line. [0002] The invention also relates to an interconnection device comprising a contactless transition having the features of the first part of claim 31 . [0003] The invention also relates to the use of an interconnect arrangement as claimed in claim 33 for performing measurements on a device comprising an electronic circuit or a device under test (DUT). Background technique [0004] In the mmWave and submillimeterWave frequency bands, the use of high frequencies is receiving increasing attention. Being able to use millimeter or submillimeter wave frequency regions is attractive because larger frequency bandwidths are available in these frequency regions. Thus, transitions or interconnections between circuits and waveguide...

AI Technical Summary

Problems solved by technology

[0007] The problem associated with wire bonding at high frequencies is that the wire inductance can be quite high, causing impedance mismatches

The pattern of the antenna cannot be de-embedded from all unwanted radiation from the probe or connector

The structure supporting the antenna and probe or connector causes strong interference on the measured antenna pattern

Furthermore, the probe will radiate significantly as a result of the discontinuity due to the transition between the probe tip and the microstrip line, affecting and degrading the signal-to-noise ratio, dynamic range

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