Method for depositing InGaN film on Si(100) substrate via double-optical-path pulse laser

A pulsed laser deposition, dual optical path technology, applied in circuits, ion implantation plating, coatings, etc., can solve problems such as difficult to prepare alloy films, and achieve the effect of saving equipment procurement costs, reducing production costs, and high crystal quality

Active Publication Date: 2019-05-31
GUANGXI UNIV
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  • Abstract
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Problems solved by technology

[0005] However, the current mainstream pulsed laser deposition equipment generally adopts the design concept of single optical path, which has great limitations, and it is difficult to prepare super-doped and composition-tunable alloy films.

Method used

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  • Method for depositing InGaN film on Si(100) substrate via double-optical-path pulse laser
  • Method for depositing InGaN film on Si(100) substrate via double-optical-path pulse laser
  • Method for depositing InGaN film on Si(100) substrate via double-optical-path pulse laser

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Embodiment Construction

[0038] The present invention will be further described below in conjunction with specific embodiments.

[0039] Please refer to figure 1 , a dual optical path pulsed laser deposition device, including a growth chamber cavity 10, a base is provided in the central area below the growth chamber cavity 10, and four evenly arranged turntables for placing targets are arranged on the base 5. The base and the turntable 5 are respectively driven to rotate by the driving mechanism, so that the target can rotate with the turntable 5; a mechanical pump connection valve 11 and a molecular pump are also provided on the lower side wall or bottom wall of the growth chamber cavity 10 Connect the valve 12 so as to connect the mechanical pump and the molecular pump to evacuate the growth chamber cavity 10; an auxiliary gas pipeline 6 is provided at the middle and lower position of the growth chamber cavity 10 to replenish O in time during the coating process. 2 and N 2 A quartz window is respe...

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Abstract

The invention relates to a method for depositing an InGaN film on a Si(100) substrate via double-optical-path pulse laser. The laser is divided into two paths to irradiate a target material. The method concretely comprises that the cleaned Si(100) substrate is placed on a substrate platform, heated to 650-750 DEG C, and thermally insulated for 50-70min; TiN, AlN, GaN and InGaN layers are depositedsuccessively in the laser energy of 150-250mJ, 50-150mJ, 200-300mJ and 100-200mJ for deposition time of 10-30min, 30-50min, 50-70min and 50-70min respectively; and the InGaN layer undergoes a double-optical-path technology. The crystal quality of the thin film can be improved, and the efficiency of devices as a semiconductor laser, light emitting diode and solar battery can be improved greatly.

Description

technical field [0001] The invention relates to a double-optical-path pulsed laser deposition (PLD) coating method and application thereof, which is specifically used for preparing epitaxial thin films and thin-film photoelectric devices, especially InGaN solar cells. Background technique [0002] PLD technology is developed along with the development of laser technology. In the 1960s, shortly after the birth of the world's first ruby ​​laser, it was discovered that when a laser beam irradiates a solid material, electrons, ions and neutral atoms run out of the solid surface and form a glowing plasma near the surface Zone, the temperature is 103 ~ 104K, and then people thought that if these ablatives were condensed on the substrate, a thin film could be obtained, so the concept of laser coating came into being. So people began to study the interaction between laser and matter. [0003] At present, photoelectric thin-film devices such as solar cells, LEDs, and LDs are mainly...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C23C14/28C23C14/06C23C14/02C23C14/58
Inventor 陆珊珊刘宇伦莫观孔莫组康沈晓明何欢符跃春
Owner GUANGXI UNIV
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