Structure and manufacturing method of a medium and high voltage trench type power metal oxide half field effect transistor

Abstract

The invention provides a structure and a manufacturing method of a medium and high voltage trench type power metal oxide half field effect transistor, comprising: a substrate+epitaxy, an oxide layer, a gate oxide layer, and a polysilicon (Poly-Si ) layer, a field oxide layer, a first doped region, a second doped region, a first implanted first P+ doped region, a first implanted second P+ doped region, a dielectric Layer (ILD), a second implantation of the first P+ doped region, a second implantation of the second P+ doped region, a first metal layer, a second metal layer, the present invention uses deep ion implantation techniques, Change the current path from the original P-doped region to the P+ doped region when the voltage collapses. Since the resistance of the P+ doped region is small, the product of the current and the path resistance is not likely to be greater than the Vbe of the built-in parasitic dual-stage transistor The voltage allows the triode to be turned on, so it is easy to maintain the original avalanche breakdown (UIS) capability and reduce the probability of snapback. The invention can complete medium and high voltage products, greatly improving the application range of the product.

Description

technical field [0001] The invention relates to electronic components, semiconductors and integrated circuits, and in particular to a structure and a manufacturing method of a medium-high voltage trench type power metal oxide half-field-effect transistor. Background technique [0002] The structure of Power MOSFET (Metal-Oxide-SemiconductorField-Effect-Transistor) can be divided into trench structure and planar structure. The trench structure is due to the cell size (Cell Pitch ) is small, and better resistance can be obtained, so it is widely used in voltages below 200V, and above 200V, because the relationship between resistance and cell size is low, it is mostly completed with a planar structure. [0003] The current simple trench (trench) structure of MOSFET is as follows: figure 1 As shown, the cross-sectional structure can be divided into the active area and the terminal area, and the number of masks generated by it is five if the passivation layer (passivation) is no...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is: when a voltage collapse occurs in a medium-high voltage MOSFET device, a large electric field will be accumulated at the node as its collapse point, and the current will stay in the drain metal layer or the gate oxide layer and lead to it. The phenomenon of device performance degradation, the present invention provides a structure and manufacturing method of a medium and high voltage trench power metal oxide half field effect transistor to solve the above problems

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