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A kind of semiconductor light-emitting device and its preparation method

A technology for light-emitting devices and semiconductors, which can be used in semiconductor devices, semiconductor lasers, laser parts, etc., and can solve problems such as reducing the limit of the light field, poor adhesion, and easy cracking.

Active Publication Date: 2021-02-02
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually laser is used to scribe the laser diode. 2 layer is laser etched, during this process, due to the SiO 2 The adhesion between the layer and the substrate is poor, and the cause of the stress itself, SiO 2 Layers are prone to cracking, making the diode a risk of leakage current
For ridge waveguide structures, SiO 2 The cracks will reduce the optical field confinement, making the performance of the device degraded

Method used

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  • A kind of semiconductor light-emitting device and its preparation method
  • A kind of semiconductor light-emitting device and its preparation method
  • A kind of semiconductor light-emitting device and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] This embodiment provides a method for preparing a semiconductor light-emitting device, such as figure 1 As shown, the method includes the following steps:

[0070] A semiconductor light-emitting device preparation method, characterized in that it comprises the following steps:

[0071] providing a substrate to form a plurality of light emitting structures on the substrate, the light emitting structures including cutting regions;

[0072] forming an insulating protective layer above the light emitting structure and on the substrate outside the light emitting structure;

[0073] A sacrificial layer is formed on the insulating protective layer, the sacrificial layer is formed on the insulating protective layer above the cutting region between the light emitting structures, and extends in a cutting direction.

[0074] In this embodiment, the substrate includes a GaN-based substrate, and the light-emitting structure includes a laser diode or a light-emitting diode formed o...

Embodiment 2

[0086] This embodiment provides a method for manufacturing a semiconductor light emitting device, and the similarities with the embodiment will not be repeated, and the difference lies in:

[0087] In this embodiment, a GaN single crystal substrate is used as an epitaxial growth substrate, and the GaN single crystal substrate may be an n-type GaN single crystal substrate. Epitaxial layers such as an active layer and a P-type layer are directly grown on the n-type GaN single crystal substrate. And sequentially form the boss structure, P-type contact layer, insulating protection layer, P-type electrode and sacrificial layer described in the first embodiment. Then an N-type electrode is formed.

[0088] In this embodiment, before forming the N-type electrode, the n-type GaN single crystal substrate is first ground and thinned, and it is etched and cleaned to remove the decomposed surface with poor crystal quality, so as to obtain a low-resistance n-type ohmic contact. Then a m...

Embodiment 3

[0090] This embodiment also provides a method for manufacturing a semiconductor light emitting device,

[0091] The similarities with Embodiment 1 will not be repeated, and the difference is:

[0092] In this embodiment, the substrate includes a conductive substrate, the light-emitting structure includes a light-emitting diode or a laser diode formed on the conductive substrate, and the light-emitting diode or laser diode is connected to the conductive substrate through a metal bonding layer. Substrate bonding connection.

[0093] In this embodiment, a light emitting diode formed on the conductive substrate is taken as an example for description. Such as Figure 10 As shown, a conductive substrate 200 is provided first, and a light emitting diode 201 is connected on the conductive substrate, and the light emitting diode 201 is bonded to the conductive substrate through a metal bonding layer 206 . There is a cutting area 202 between adjacent LEDs. Then deposit and cover the...

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Abstract

The present invention provides a semiconductor light-emitting device manufacturing method, comprising: providing a substrate, forming a plurality of light-emitting structures on the substrate, and cutting regions are included between the light-emitting structures; An insulating protection layer is formed on the substrate; a metal sacrificial layer is formed on the insulating protection layer, and the sacrificial layer is formed on the insulating protection layer above the cut region between the light emitting structures, and along the cut direction extension. When cutting and scribing semiconductor light-emitting devices with lasers, the sacrificial layer is first etched. The sacrificial layer can absorb the energy of the laser and serve as an energy buffer layer and diffusion layer to avoid damage such as rupture of the insulating protective layer due to a sudden increase in energy. Under the action of the laser, the sacrificial layer is burnt off by the laser, and no residue that affects the semiconductor light emitting device remains, nor does it affect the performance of the semiconductor light emitting device.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a semiconductor light emitting device and a preparation method thereof. Background technique [0002] Semiconductor light-emitting devices, such as light-emitting diodes and laser diodes, have attracted more and more attention to their research and market applications due to their excellent light-emitting characteristics. For example, GaN-based light-emitting diodes and laser diodes have achieved extensive research and market applications, especially in laser display and laser projection. At present, the main bottleneck of GaN-based light-emitting diodes and laser diodes is high-power GaN blue and green laser diodes, and the structure of laser diodes is mainly an edge-emitting ridge waveguide structure. [0003] For laser diodes with edge-emitting ridge waveguide structures, the current LD process uses low-temperature SiO 2 Covered on GaN, poor adhesio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/44H01L33/00H01S5/323
Inventor 钟志白李佳恩连燕玲卓昌正徐宸科康俊勇苏住裕
Owner QUANZHOU SANAN SEMICON TECH CO LTD