Light-emitting diode epitaxial wafer and growing method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a growing method thereof and belongs to the field of semiconductor technology. The epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a stress releasing layer, an active layer and a P-type semiconductor layer, wherein the buffer layer, the N-type semiconductor layer, the stress releasing layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate; the stress releasing layer comprises multiple composite structures stacked sequentially, and each compositestructure comprises a first sub-layer, a second sub-layer and a third sub-layer stacked sequentially; the material of each first sub-layer is silicon and indium doped gallium nitride, the material ofeach second sub-layer is silicon-doped gallium nitride, and the material of each third sub-layer is indium-doped gallium nitride; and in the same composite structure, the doping concentration of silicon in the second sub-layer is smaller than the doping concentration of silicon in the first sub-layer, and the doping concentration of indium in the third sub-layer is greater than the doping concentration of indium in the first sub-layer. Through the light-emitting diode epitaxial wafer, the luminous efficiency of an LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a growth method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that can convert electrical energy into light energy. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are rapidly and widely used in traffic lights, automotive interior and exterior lights, urban landscape lighting, mobile phone backlights and other fields. The core component of LED is the chip, and improving the luminous efficiency of the chip is the goal that is constantly pursued in the process of LED application. [0003] The chip includes an epitaxial wafer and electrodes provided on the epitaxial wafer. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-ty...

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Problems solved by technology

[0007] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and a growth method thereof, which can solve the problem that the stress release layer in the prior art cannot effectively improve the luminous efficiency of the LED.

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