Deposition device

A deposition device and deposition chamber technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of difficulty in forming plasma, high cathode target material, low target material utilization rate, etc., and achieve improvement The effect of working stability, avoidance of ablation, and long service life

Active Publication Date: 2019-06-14
BEIJING NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. Compared with the arc, the deposition efficiency of the magnetic filtration technology has a large gap, and the utilization rate of the target is low;
[0004] 2. Due to the principle of conventional arc discharge arcing, the temperature of the cathode target itself is relatively high during work, and it is not easy to form plasma for low melting point and active metals, let alone deposit such metal films

Method used

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Effect test

Embodiment 1

[0069] The cathode material is metal Mg, diameter Φ100, thickness 20mm, arcing current 10A, arcing voltage 20V, vacuum chamber vacuum 1×10 -3 pa;

[0070] During normal operation, the cathode target temperature is 30°C, and the gap between the auxiliary anode system and the shielding ring is 1mm;

[0071] The length of the control line package is 60mm, the number of turns is 3000 turns, the distance from the top plane of the cathode is 50mm, the current of the line package is 8A, the frequency is 15Hz, and the pulse width is 100μs;

[0072] The length of the anode cylinder is 120mm, the inside and outside of the part close to the cathode 60mm is made of stainless steel, and the rest is magnetically permeable material, the relative magnetic permeability is 500, the permanent magnet on the anode cylinder is 30mm away from the outer plane of the cathode trigger, and the permanent magnet strength is 300mT;

[0073] The length of the straight tube magnetic filter is 250mm, the too...

Embodiment 2

[0077] The cathode material is metal Mg, the diameter is Φ100, the thickness is 20mm, the arcing current is 15A, the arcing voltage is 20V, and the vacuum chamber vacuum is 1×10 -3 Pa;

[0078] During normal operation, the cathode target temperature is 20°C, and the gap between the auxiliary anode system and the shielding ring is 1mm;

[0079] The length of the control line package is 60mm, the number of turns is 3500 turns, the distance from the top plane of the cathode is 50mm, the current of the line package is 8A, the frequency is 15Hz, and the pulse width is 100μs;

[0080] The length of the anode cylinder is 120mm, the inside and outside of the part close to the cathode 60mm is made of stainless steel, and the rest is magnetically permeable material, the relative magnetic permeability is 500, the permanent magnet on the anode cylinder is 30mm away from the outer plane of the cathode trigger, and the permanent magnet strength is 300mT;

[0081] The length of the straight...

Embodiment 3

[0085] The cathode material is metal Mg, the diameter is Φ100, the thickness is 20mm, the arcing current is 20A, the arcing voltage is 20V, and the vacuum in the vacuum chamber is 1×10 -3 Pa;

[0086] During normal operation, the temperature of the cathode target is 15°C, the gap between the auxiliary anode system and the shielding ring is 1mm; the length of the control wire package is 60mm, the number of turns is 4000 turns, the distance from the top plane of the cathode is 50mm, the current of the wire package is 8A, the frequency is 15Hz, and the pulse width is 100μs;

[0087] The length of the anode cylinder is 120mm, the inside and outside of the part close to the cathode 60mm is made of stainless steel, and the rest is magnetically permeable material, the relative magnetic permeability is 500, the permanent magnet on the anode cylinder is 30mm away from the outer plane of the cathode trigger, and the permanent magnet strength is 300mT;

[0088] The length of the straight...

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Abstract

The invention discloses a low-melting-point and active metal film deposition device which comprises a vacuum system, a cathode arc head, a strong pulsed magnetic field, a permanent magnet anode cylinder, a magnetic filter pipe and a focusing coil. Through implementing the low-melting-point and active metal film deposition device provided by the invention, the directivity of an ion arriving at thesurface of a coating workpiece is good, and meanwhile, low-melting-point metals such as Zn, Mg and Li can be deposited on the basis of the improved cooling cathode arc head, so that electric arc coating is realized; and under the vacuum protection, the surface deposition of active metals such as Na can be realized, and the technical blank of low-melting-point and active metal film deposition is filled. A magnetic filter device provided by the invention has a wide application prospect in nuclear astrophysics system targets and medicines.

Description

technical field [0001] The invention proposes a deposition device for solving the difficulty in deposition of low melting point and active metals. technical background [0002] The filter cathodic vacuum arc deposition technology is a new type of ion beam film preparation method developed in recent years. It filters out the large particles and neutral atoms generated by the arc source through the magnetic filter technology, and obtains no The pure plasma beam of large particles not only effectively overcomes the problems caused by the existence of large particles in the common arc source deposition method, but also prepares thin films with excellent properties. FCVA technology can prepare high-quality and high-performance film materials, and has many advantages, such as depositing high-quality films under a wide range of conditions, high deposition rates and good film uniformity for metals, alloys and compounds, and can be used at low It is deposited at a certain substrate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32
Inventor 廖斌欧阳晓平罗军
Owner BEIJING NORMAL UNIVERSITY
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