Near ultraviolet light emitting diode epitaxial wafer and preparation method thereof
A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as affecting the luminous efficiency of carrier recombination, and achieve the effect of improving the probability of space recombination, improving the internal quantum efficiency, and enhancing the blocking effect.
Active Publication Date: 2020-04-14
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0003] In the process of realizing the present invention, the inventors found that there are at least the following problems in the prior art: although the electron blocking layer can block the leakage of most of the electrons, due to the fast number and moving speed of the electrons, there will still be more electrons from The MQW layer overflows into the P-type AlGaN layer, which affects the recombination luminescence efficiency of carriers
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[0022] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0023] figure 1 The method for preparing a near-ultraviolet light emitting diode epitaxial wafer provided by an embodiment of the present invention is shown. See figure 1 , The method flow includes the following steps.
[0024] Step 101: Provide a substrate.
[0025] Step 102: Deposit an AlN buffer layer, an undoped AlGaN layer, an N-type doped AlGaN layer, a low-temperature stress release layer, a multiple quantum well layer, an electron blocking layer, a P-type doped AlGaN layer, and P in sequence on the substrate. Type contact layer.
[0026] Among them, the multiple quantum well layer includes multiple quantum well layers and multiple quantum barrier layers, the quantum well layer and the quantum barrier layer are grown alternately, and the q...
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Abstract
The invention discloses a near ultraviolet light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the field of light emitting diodes. The epitaxial wafer comprises a substrate, and an AlN buffer layer, an undoped AlGaN layer, an N-type doped AlGaN layer, a low temperature stress relief layer, a multi-quantum well layer, an electron blocking layer, a P-type doped AlGaN layer and a P-type contact layer, which are sequentially deposited on the substrate, wherein the multi-quantum well layer comprises a plurality of quantum well layers and a plurality of quantum barrier layers, which are all alternately stacked and grown, the quantum barrier layers comprise BxAl1-xN sub layers, and the quantum well layers comprise InyGa1-yN sub layers, wherein x is greater than or equal to 0.13 and less than or equal to 0.15, and y is greater than or equal to 0 and less than 0.1.
Description
Technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a near-ultraviolet light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] An LED (Light Emitting Diode) generally includes an epitaxial wafer and an electrode prepared on the epitaxial wafer. For near-ultraviolet light-emitting diode epitaxial wafers, it usually includes: a substrate, and a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, and MQW (Multiple Quantum Well) stacked on the substrate in sequence. Layer, electron blocking layer, p-type AlGaN layer and contact layer. When current is injected into the LED, electrons in the N-type region such as the N-type AlGaN layer and holes in the P-type region such as the P-type AlGaN layer enter the MQW active region and recombine, emitting visible light. Among them, the MQW layer is a periodic structure in which InGaN quantum wells and AlGaN quantum barriers are grown altern...
Claims
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IPC IPC(8): H01L33/06H01L33/32H01L33/14H01L33/00
Inventor 苏晨肖扬王慧蒋媛媛吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD