Fluorescent material, preparation method thereof, optoelectronic device and method for manufacturing optoelectronic device

A technology of optoelectronic devices and fluorescent materials, applied in the direction of luminescent materials, electrical components, semiconductor devices, etc.

Inactive Publication Date: 2019-06-28
EVERLIGHT ELECTRONICS
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are no relevant reports on fluorescent materials that can generate a wider red visible-near-infrared spectrum and have higher rad

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fluorescent material, preparation method thereof, optoelectronic device and method for manufacturing optoelectronic device
  • Fluorescent material, preparation method thereof, optoelectronic device and method for manufacturing optoelectronic device
  • Fluorescent material, preparation method thereof, optoelectronic device and method for manufacturing optoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] This embodiment provides a group of fluorescent materials whose general formula is La 3 Ga 1-y Ge 5 o 16 :yCr 3+ , where 0

[0093] La 3 Ga 0.995 Ge 5 o 16 :0.005Cr 3+

[0094] La 3 Ga 0.99 Ge 5 o 16 :0.01Cr 3+

[0095] La 3 Ga 0.97 Ge 5 o 16 :0.03Cr 3+

[0096] La 3 Ga 0.95 Ge 5 o 16 :0.05Cr 3+

[0097] La 3 Ga 0.93 Ge 5 o 16 :0.07Cr 3+

[0098] La 3 Ga 0.91 Ge 5 o 16 :0.09Cr 3+

[0099] La 3 Ga 0.89 Ge 5 o 16 :0.11Cr 3+

[0100] La 3 Ga 0.87 Ge 5 o 16 :0.13Cr 3+

[0101] The preparation method of this group of fluorescent materials is: according to the stoichiometric ratio in the molecular formula of the fluorescent materials, accurately weigh the raw material La 2 o 3 , Ga 2 o 3 、GeO 2 and Cr 2 o 3 ;Put the weighed raw materials into an agate mortar and grind to mix evenly, then transfer the resulting mixture to an alumina crucibl...

Embodiment 2

[0106] This embodiment provides a fluorescent material with a molecular formula of La 2.97 Ga 0.99 Ge 5 o 16 :0.03Gd 3+ ,0.01Cr 3+ , the preparation method of the fluorescent material is as follows:

[0107] Accurately weigh the raw material La according to the stoichiometric ratio in the molecular formula of the fluorescent material 2 o 3 , Ga 2 o 3 、GeO 2 、Gd 2 o 3 and Cr 2 o 3 , put the weighed raw material into an agate mortar and grind it to mix evenly, then transfer the mixture to an alumina crucible, and place it in a tube furnace for sintering in an air atmosphere, controlling the sintering temperature to 1300°C The sintering time is about 6 hours, and after being cooled in the furnace, it is ground into powder to obtain fluorescent materials.

[0108] Such as Figure 5 As shown, the XRD diffraction pattern of the fluorescent material is compared with the standard X-ray diffraction pattern, and all the diffraction peaks of the fluorescent material are co...

Embodiment 3

[0112] This embodiment provides a fluorescent material whose molecular formula is La 2.97 Ga 0.99 Ge 5 o 16 :0.03Yb 3+ ,0.01Cr 3+ , the preparation method of the fluorescent material is as follows:

[0113] Accurately weigh the raw material La according to the stoichiometric ratio in the molecular formula of the fluorescent material 2 o 3 , Ga 2 o 3 、GeO 2 , Yb 2 o 3 and Cr 2 o 3 , put the weighed raw material into an agate mortar and grind it to mix evenly, then transfer the mixture to an alumina crucible, and place it in a tube furnace for sintering in an air atmosphere, controlling the sintering temperature to 1300°C The sintering time is about 6 hours, and after being cooled in the furnace, it is ground into powder to obtain fluorescent materials.

[0114] Such as Figure 7 As shown, the XRD diffraction pattern of the fluorescent material is compared with the standard X-ray diffraction pattern, and all the diffraction peaks of the fluorescent material are co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a fluorescent material, a preparation method thereof, an optoelectronic device and a method for manufacturing the optoelectronic device. The fluorescent material has the following general formula: La3Ga5(1-x)Ge1-yO14:5xCr3+,ySn4+, wherein x is greater than or equal to 0 and less than or equal to 0.1, and y is greater than or equal to 0 and less than or equal to 0.9. The fluorescent material is excited by blue visible light, purple visible light or ultraviolet light; the emission spectrum is located in the red visible light and near-infrared region; the material can be applied to photoelectronic devices such as LEDs (light-emitting diodes) to meet the application requirements of medical detection, food component analysis, safety cameras, iris/face recognition, virtualreality, notebook games, laser detection and measurement and the like at present.

Description

[0001] This application is submitted to the China Intellectual Property Office with the application number 201811083223.3, the application date is September 17, 2018, and the invention and creation name is "fluorescent material and its preparation method, optoelectronic device and method for manufacturing optoelectronic device". divisional application. technical field [0002] The present invention relates to a fluorescent material and its preparation method, an optoelectronic device and a method for manufacturing the optoelectronic device, in particular to a fluorescent material with high radiation flux and wide emission wavelength in the red visible light-near infrared region and its preparation process, An optoelectronic device provided with the fluorescent material and a manufacturing process of the optoelectronic device. Background technique [0003] Visible light is the part of the electromagnetic spectrum that the human eye can perceive, and infrared light is electrom...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K11/80H01L33/50
CPCC09K11/7707C09K11/7708C09K11/7775C09K11/7776H01L33/486H01L33/501H01L33/502C09K11/62C09K11/66C09K11/77C09K11/7766H01L33/005H01L2933/0041
Inventor 韦拉马尼·拉金德伦方牧怀刘如熹张合吕侊懋林晏申康桀侑盖伯瑞尔尼科洛·德·古斯曼胡淑芬
Owner EVERLIGHT ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap