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A method for improving the gate metal/semiconductor interface of gan devices

A gate metal and semiconductor technology, applied in the field of microelectronics, can solve the problems of restricting the actual use of devices, lack of GaN device gate metal/semiconductor interface characteristics, and affecting the normal operation of devices, so as to improve the interface quality, enhance the degree of improvement, and reliability Enhanced effect

Active Publication Date: 2021-03-23
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This seriously affects the normal operation of the device in various fields, and restricts the actual use of the device
However, so far, there is still a lack of effective methods to improve the gate metal / semiconductor interface properties of GaN devices

Method used

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  • A method for improving the gate metal/semiconductor interface of gan devices
  • A method for improving the gate metal/semiconductor interface of gan devices
  • A method for improving the gate metal/semiconductor interface of gan devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] See figure 1 , figure 1 A schematic flowchart of a method for improving the gate metal / semiconductor interface of a GaN device provided by an embodiment of the present invention, including:

[0036] S1. Prepare a GaN device, wherein the GaN device has a Schottky contact region; please refer to figure 2 , figure 2 A schematic flow diagram for preparing a GaN device provided by an embodiment of the present invention, specifically including steps:

[0037] S11, selecting a substrate 1;

[0038] Sapphire is selected as the substrate of the AlGaN / GaN epitaxial structure. The reason for using sapphire as the substrate is that there is no economically available natural substrate for GaN. The growth of GaN can only be epitaxy through some heterogeneous substrates, and GaN is grown on the sapphire substrate. , the defects caused by lattice mismatch are smaller than other substrates, and the price of sapphire is lower.

[0039] S12, growing an AlN nucleation layer 2 on the...

Embodiment 2

[0066] Firstly, the first GaN device is prepared, and the steps of preparing the first GaN device are as described in the first embodiment.

[0067] Then, a semiconductor parameter analyzer is used to perform capacitance-voltage (C-V) tests at multiple frequencies (10kHz-5MHz) on the first GaN device, and the first data is obtained as the data of the initial state; wherein, the gate voltage during the C-V test is set to -6V to 1V.

[0068] Secondly, at the preset energy of 3 MeV and the first dose of 5×10 13 h + / cm 2 1. Under the conditions of a preset temperature of 22° C. (room temperature) and a vacuum environment, a low-energy accelerator is used to uniformly irradiate the Schottky contact region of the first GaN device with an irradiation time of 10 h.

[0069] Then after the irradiation is completed, a semiconductor parameter analyzer is used to perform capacitance-voltage (C-V) tests on the irradiated GaN device at multiple frequencies (10kHz-5MHz), and the second d...

Embodiment 3

[0087] On the basis of Example 2, first prepare the second GaN device, the steps of preparing the second GaN device are the same as preparing the first GaN device; then carry out C-V test, proton irradiation, C-V test and physical parameter extraction on the second GaN device For the process of C-V test, proton irradiation, and physical parameter extraction process, please refer to Example 2. During proton irradiation, the second dose is 1×10 14 h + / cm 2 The second device is irradiated.

[0088] Next, prepare the third GaN device, the steps of preparing the third GaN device are the same as preparing the first GaN device; then carry out the process of C-V test, proton irradiation, C-V test and physical parameter extraction on the third GaN device, wherein, the C-V test , proton irradiation, physical parameter extraction process please refer to embodiment two, the third dose is 5 × 10 14 h + / cm 2 The third device is irradiated.

[0089] See Figure 6 , Figure 6 A comp...

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Abstract

The invention relates to a method for improving the gate metal / semiconductor interface of a GaN device. The method comprises steps of: preparing a GaN device, wherein the GaN device has a Schottky contact region; and performing proton irradiation on the Schottky contact region under preset energy, preset dose, preset temperature, and preset time,. In the embodiment of the invention, by performinga certain degree of proton irradiation on the Schottky contact region of the GaN device, the density of state of the gate metal / semiconductor interface is reduced, thereby improving the interface quality and improving the reliability of the device. Thus, the GaN device can be used normally in various fields and the GaN device has a wide application range.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for improving the gate metal / semiconductor interface of a GaN device. Background technique [0002] GaN materials are widely used in high-power and high-frequency devices because of their good physical properties such as wide bandgap, high saturation electron velocity, and high breakdown electric field. The performance of devices prepared based on GaN materials is far superior to conventional devices, and has great application prospects in satellite communications, aerospace and other fields. This type of device has become the focus of people's attention and research. [0003] The quality of the gate metal / semiconductor interface in a GaN device is very important to the reliability of the device. At present, the method for forming the gate metal / semiconductor interface of the device is that the gate metal is in contact with the AlGaN barrier layer ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/338
Inventor 郑雪峰陈管君马晓华董帅帅王小虎郝跃
Owner XIDIAN UNIV
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