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Composite quantum dot, quantum dot solid film and application thereof

A composite quantum and quantum dot technology, applied in the display field, can solve the problems of reducing the fluorescence intensity and stability of the solid-state film of quantum dots, and achieve the effect of improving the fluorescence intensity and device stability, with strong repeatability and easy operation.

Inactive Publication Date: 2019-07-09
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a composite quantum dot and its preparation method, aiming to solve the problem that the short-chain organic ligands on the surface of the existing quantum dots reduce the fluorescence intensity and stability of the quantum dot solid film

Method used

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Examples

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Comparison scheme
Effect test

preparation example Construction

[0030] Correspondingly, the embodiment of the present invention also provides a preparation method of composite quantum dots, comprising the following steps:

[0031] S01. Add the halide AMX m+1 Dispersed in a polar solvent to obtain a halide anion modifier, the halide AMX m+1 It is a halide having a perovskite structure, and the halide anion modifier is [AMX m+n+1 ] n- , wherein, M is selected from one of Pb, Cd, Zn, In, Fe, Sb, X is selected from one of Cl, Br, I, and A is CH 3 NH 3 , m is the valence number of M, n is the valence number of the halide anion modifier, and m is 2 or 3, when m is 2, n is 1; when m is 3, n is 1 or 2; The polar solvent is an organic solvent capable of ionizing the halide to form a halide anion and a halide cation;

[0032] S02. Provide quantum dots with oil-soluble ligands on the surface, mix the quantum dots with the halide anion modifier, and exchange the halide anion modifier with the ligands on the surface of the quantum dots to prepare ...

Embodiment 1

[0053] A preparation method of composite quantum dots, comprising the following steps:

[0054] The preparation of S1.PbS quantum dots is as follows:

[0055] S11. Lead oleate {Pb(OA) 2}Precursor preparation: Take 0.6mmol of lead acetate trihydrate, 2ml of oleic acid (OA), and 10ml of octadecene (ODE) into a three-necked flask, first exhaust at room temperature for 20min, then raise the temperature to 150°C and stir for 30min The temperature was lowered to 120°C.

[0056] S12. Preparation of sulfur (S) precursor: add 4mmol of S to 6ml of trioctylphosphine (TOP), heat to 170°C for 30min, then cool down to 140°C.

[0057] S13. After raising the temperature of the mixed solution in S11 to 150°C, take 2ml of sulfur (S) precursor and quickly inject it into the flask to react for 10 minutes, quickly take out the heating mantle and wait for the temperature of the mixed solution to cool down to room temperature, then add the extractant Centrifugal separation and cleaning with a pre...

Embodiment 2

[0064] a CH 3 NH 3 PbCl 4 - or CH 3 NH 3 PbCl 5 2 The preparation method of the PbS quantum dot solid film of modification, comprises the following steps:

[0065] Take 100mg of Example 1 to prepare CH 3 NH 3 PbCl 4 - or CH 3 NH 3 PbCl 5 2 The modified PbS quantum dots were dispersed in 10ml of methylformamide and dissolved for later use; a layer of quantum dot solid film was prepared by printing; the prepared quantum dot solid film was annealed at 80°C for 30min.

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Abstract

The invention provides a composite quantum dot, and the composite quantum dot is a quantum dot modified by a halide anion modifier and comprises quantum dot particles and the halide anion modifier combined on the surfaces of the quantum dot particles, wherein the halide anion modifier is [AMXm+n+1]n-, wherein M is selected from one of Pb, Cd, Zn, In, Fe and Sb, X is selected from one of Cl, Br andI, A is CH3NH3, m is the valence number of M, n is the valence number of the halide anion modifier, m is 2 or 3, and when m is 2, n is 1; when m is 3, n is 1 or 2; and the [AMXm+n+1]n- is of a perovskite structure. The composite quantum dot with the above-mentioned characteristics can improve the fluorescence intensity of the quantum dot and reduce exciton energy transfer between the quantum dotand the quantum dot at the same time.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a composite quantum dot, a quantum dot solid film and applications thereof. Background technique [0002] Quantum dots have a large specific surface area, which means that the electrical and optical properties of quantum dots are dominated by the surface electronic state, especially the electronic state of the band gap, so understanding and controlling the electronic state of the quantum dot surface and using these The electrical properties to make some applications are an important research topic. [0003] The electrical properties of colloidal semiconductor quantum dots are more important. Depending on the ligand molecules on the surface of colloidal quantum dots, the types of ligands contained in the surface of colloidal quantum dots synthesized by different methods are also different, but these ligands are critical to the dispersion and surface charge passivatio...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50H01L51/54B82Y30/00
CPCB82Y30/00H10K50/115H10K2102/00H10K71/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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