Impurity removal method for high-purity arsenic
A technology for high-purity arsenic and impurity elements, applied in the field of impurity removal of high-purity arsenic, can solve the problems of lowering economic value, lowering purity, affecting the purity and economic value of high-purity arsenic, and achieving low production cost, thorough impurity removal, Ease of mass production
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Embodiment 1
[0039] Soak the used quartz tube in clean aqua regia for 2 hours, take out the quartz tube and rinse the quartz tube with ultrapure water until it is clean, put it into a hydrogenation reduction furnace for production, and after testing, the Si in the whole high-purity arsenic produced is The content is 288ppb, the S content is 2.3ppb, and the Na content is 1.5ppb. Put the unbroken whole root of high-purity arsenic in a vacuum device, use a vacuum pump to pump the vacuum degree of the vacuum device to 50Pa, heat the vacuum device to 300°C, keep it warm for 5 hours, and the surface layer of the whole root of high-purity arsenic with a thickness of 0.02mm is partially volatilized , the impurity elements attached to the surface part of the whole high-purity arsenic also volatilize. The impurity content on the surface of the whole high-purity arsenic was detected, and the Si content was 2.8ppb, the S content was 1.2ppb, and the Na content was 1.1ppb. The whole root of high-purity...
Embodiment 2
[0041]Soak the used quartz tube in clean aqua regia for 3 hours, take out the quartz tube and rinse the quartz tube with ultrapure water until it is clean, put it into a hydrogenation reduction furnace for production, and after testing, the Si in the whole high-purity arsenic produced is The content is 251 ppb, the S content is 1.8 ppb, and the Na content is 1.4 ppb. Put the unbroken whole root of high-purity arsenic in a vacuum device, use a vacuum pump to pump the vacuum degree of the vacuum device to 50Pa, and heat the vacuum device to 390°C, keep it warm for 2 hours, and the surface layer of the whole root of high-purity arsenic with a thickness of 0.05mm is partially volatilized , the impurity elements attached to the surface part of the whole high-purity arsenic also volatilize. The impurity content on the surface of the whole high-purity arsenic was detected, and the Si content was 3.2ppb, the S content was 1ppb, and the Na content was 1ppb. The whole root of high-puri...
Embodiment 3
[0043] Soak the used quartz tube in clean aqua regia for 2.5 hours, take out the quartz tube and rinse the quartz tube with ultrapure water until it is clean, put it into a hydrogenation reduction furnace for production, and after testing, the whole high-purity arsenic produced is The Si content was 267 ppb, the S content was 2.0 ppb, and the Na content was 1.6 ppb. Put the unbroken whole root of high-purity arsenic in a vacuum device, use a vacuum pump to pump the vacuum degree of the vacuum device to 50Pa, and heat the vacuum device to 600°C, keep it warm for 1 hour, and the surface layer of the whole root of high-purity arsenic with a thickness of 0.10mm is partially volatilized , the impurity elements attached to the surface part of the whole high-purity arsenic also volatilize. The impurity content on the surface of the whole high-purity arsenic was detected, and the Si content was 3.2ppb, the S content was 1ppb, and the Na content was 1ppb. The whole root of high-purity...
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