7 results about "Arsenic trichloride" patented technology

The application provides a preparation method and device of high-purity zinc arsenide by multiphase reduction-melt alloying, and belongs to the technical field of inorganic compound synthesis. The method uses arsenic trichloride as an arsenic source, volatilizes the arsenic trichloride by precise temperature control, and transports AsCl3 vapor to a reactor containing high-purity liquid zinc by using high-purity inert gas as a carrier gas; at a set reaction temperature, the liquid zinc reduces the AsCl3 gas phase to generate elemental arsenic, and the elemental arsenic immediately reacts with zinc to generate zinc arsenide Zn3As2 in situ; the by-product zinc chloride ZnCl2 escapes in a gaseous form and is collected by a condensation system, and the zinc arsenide is suspended on the surface of the zinc melt due to the lower density than the liquid zinc, so that continuous or batch separation and collection can be realized. The application has the advantages of simple process, high reaction efficiency and high product purity, avoids problems such as uneven components and introduction of impurities in the traditional solid-phase reaction method, and is suitable for large-scale production of semiconductor-grade zinc arsenide materials.

The utility model discloses a purification device for arsenic trichloride tail gas treatment, which belongs to the technical field of tail gas treatment and comprises a base, a tank is fixedly connected to the top end of the base, an opening is formed in the outer wall of the tank, a discharge component is arranged at the top end of the tank, and a stirring component is arranged in the tank. According to the tail gas treatment device, the screen plate is arranged in the tail gas treatment device, when tail gas is treated, treatment liquid is poured into the tank body, and meanwhile, the motor is started to drive the mounting shaft to rotate and drive the screen plate to rotate, so that the treatment liquid is stirred through the screen plate, and bubbles formed by the tail gas discharged by the air injection disc are scattered; according to the tail gas treatment device, bubbles formed by tail gas can be scattered through rotation of the screen plate when the tail gas is discharged into treatment liquid by the gas spraying disc, so that the tail gas can be in full contact with the treatment liquid, and harmful substances in the tail gas are treated.

The invention discloses a method for efficiently removing arsenic from a crude germanium tetrachloride solution based on arsenic hydride reduction, and belongs to the technical field of rare and noble metal metallurgy. According to the method, arsenic hydride gas is introduced into a crude germanium tetrachloride solution containing arsenic impurities under the protection of inert atmosphere and under the mild condition of 20-80 DEG C; the arsenic hydride and arsenic compounds such as arsenic trichloride, arsenious acid and arsenic acid in the solution are subjected to selective reduction reaction to generate simple substance arsenic solid precipitate. Then a germanium tetrachloride solution subjected to deep arsenic removal can be obtained through simple solid-liquid separation operation, obtained arsenic-containing solids are washed and dried, and resource recycling of crude arsenic products is synchronously achieved. The method provided by the invention initiates a new arsenic removal path of reduction-precipitation, has the outstanding advantages of high arsenic removal efficiency, good selectivity, short process flow, no secondary pollution and capability of realizing arsenic resource utilization, and provides a brand new solution for green and efficient preparation of high-purity germanium tetrachloride.

This invention provides a method for recovering arsenic from high-concentration arsenic-containing wastewater, comprising the following steps: a) mixing the high-concentration arsenic-containing wastewater with concentrated sulfuric acid for the first time, followed by a first distillation to obtain a first acid solution and a first arsenic-rich solution; b) mixing the first arsenic-rich solution obtained in step a) with concentrated sulfuric acid for the second time, followed by a second distillation to obtain a second acid solution and arsenic trichloride. Compared with the prior art, this invention first mixes concentrated sulfuric acid with high-concentration arsenic-containing wastewater and then distills to obtain a first arsenic-rich solution, and then mixes the first arsenic-rich solution with concentrated sulfuric acid and distills to obtain arsenic trichloride. This method is simple and easy to operate, the sulfuric acid used can be recycled after dehydration treatment, no waste residue is generated during the process, no post-treatment is required, and the obtained arsenic trichloride has high purity and can be used as a raw material for the production of high-purity arsenic.

The application discloses a recovery method and system of tail gas after hydroreduction of arsenic trichloride, and the recovery method comprises the following steps: carrying out cooling separation treatment on the tail gas to obtain first tail gas, liquid arsenic trichloride and arsenic powder; the first tail gas is introduced into concentrated sulfuric acid to dissolve residual arsenic trichloride vapor in the first tail gas and obtain second tail gas; hydrogen chloride in the second tail gas is absorbed by an absorption liquid, and hydrogen is separated out and discharged or recovered. Through three-stage cooperative treatment, solid arsenic, unreacted liquid arsenic trichloride and gaseous hydrogen chloride in the tail gas are respectively separated and purified for reuse, closed-loop circulation of arsenic and chlorine elements is realized, and safe discharge of the tail gas is achieved.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600° C. or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7Cl), diiodosilane (SiH2I2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCl3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCl4), carbon tetrachloride (CCl4), and hexachlorodisilane (Si2Cl6).

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600 °C or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7CI), diiodosilane (SiH2l2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCI3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCI3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCI4), carbon tetrachloride (CCI4), and hexachlorodisilane (Si2CI6).