3 results about "Arsenic trichloride" patented technology

The application provides a preparation method and device of high-purity zinc arsenide by multiphase reduction-melt alloying, and belongs to the technical field of inorganic compound synthesis. The method uses arsenic trichloride as an arsenic source, volatilizes the arsenic trichloride by precise temperature control, and transports AsCl3 vapor to a reactor containing high-purity liquid zinc by using high-purity inert gas as a carrier gas; at a set reaction temperature, the liquid zinc reduces the AsCl3 gas phase to generate elemental arsenic, and the elemental arsenic immediately reacts with zinc to generate zinc arsenide Zn3As2 in situ; the by-product zinc chloride ZnCl2 escapes in a gaseous form and is collected by a condensation system, and the zinc arsenide is suspended on the surface of the zinc melt due to the lower density than the liquid zinc, so that continuous or batch separation and collection can be realized. The application has the advantages of simple process, high reaction efficiency and high product purity, avoids problems such as uneven components and introduction of impurities in the traditional solid-phase reaction method, and is suitable for large-scale production of semiconductor-grade zinc arsenide materials.

The application discloses a recovery method and system of tail gas after hydroreduction of arsenic trichloride, and the recovery method comprises the following steps: carrying out cooling separation treatment on the tail gas to obtain first tail gas, liquid arsenic trichloride and arsenic powder; the first tail gas is introduced into concentrated sulfuric acid to dissolve residual arsenic trichloride vapor in the first tail gas and obtain second tail gas; hydrogen chloride in the second tail gas is absorbed by an absorption liquid, and hydrogen is separated out and discharged or recovered. Through three-stage cooperative treatment, solid arsenic, unreacted liquid arsenic trichloride and gaseous hydrogen chloride in the tail gas are respectively separated and purified for reuse, closed-loop circulation of arsenic and chlorine elements is realized, and safe discharge of the tail gas is achieved.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600° C. or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7Cl), diiodosilane (SiH2I2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCl3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCl4), carbon tetrachloride (CCl4), and hexachlorodisilane (Si2Cl6).