Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structures and methods of forming them

A semiconductor and gate structure technology, which is applied in the field of semiconductor structure and its formation, can solve the problems that the performance of fin field effect transistors needs to be further improved, and achieve the effect of small height difference and improved performance

Active Publication Date: 2021-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, with the further improvement of the integration level of semiconductor devices, the performance of fin field effect transistors needs to be further improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] As mentioned in the background, FinFETs have poor performance.

[0027] Figure 1 to Figure 3 It is a structural schematic diagram of each step of a method for forming a fin field effect transistor.

[0028] Please refer to figure 1 , provide a base 100, the base 100 has a first fin 101, and a second fin 102 and a third fin 103 located on both sides of the first fin 101, the first fin 101 to the second fin The distance from the first fin 101 to the third fin 102 is different from the distance from the first fin 101 to the third fin 103. The top of the first fin 101 has a mask layer 104; an initial isolation layer 105 is formed on the surface of the substrate 100, and the initial isolation The layer 105 covers the sidewalls of the first fin 101 and part of the sidewalls of the mask layer 104 .

[0029] Please refer to figure 2 , removing the mask layer 102 , forming an opening 106 in the initial isolation layer 103 , and the opening 106 exposes the initial isolation...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor structure and a method for forming the same, wherein the method includes: providing a substrate with a first fin on the substrate, and a second fin and a third fin respectively located on both sides of the first fin, the first fin The distance to the second fin is different from the distance from the first fin to the third fin. The top surface of the first fin has a mask layer; an initial isolation layer is formed on the surface of the substrate, and the initial isolation layer covers the first fin. The sidewall and part of the sidewall of the mask layer; the mask layer is removed, and a first opening is formed in the initial isolation layer; a sacrificial film is formed on the surface of the initial isolation layer and in the first opening, and the sacrificial film has a The second opening has a depth smaller than that of the first opening. The semiconductor device formed by the method has better performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is the main component of most semiconductor devices. When the channel length is less than 100nm, in the traditional MOSFET, the source and drain regions are separated due to the semiconductor material of the semiconductor substrate surrounding the active region. Interaction, the distance between the drain and the source is also shortened, resulting in a short channel effect, so that the control ability of the gate to the channel becomes worse, and it becomes more and more difficult for the gate voltage to pinch off the channel The larger the , the easier it is for the subthrehhold leakage to occur. [0003] Fin field effect transistor (Fin Field effect transistor, FinFET) is a new metal oxide semiconductor field effect transis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8234H01L27/088
CPCH01L21/823431H01L21/823481H01L27/0886
Inventor 李程
Owner SEMICON MFG INT (SHANGHAI) CORP