III-nitride enhanced HEMT based on composite barrier layer structure and manufacturing method of III-nitride enhanced HEMT

Abstract

The invention discloses a III-nitride enhanced HEMT based on a composite barrier layer structure and a manufacturing method of the III-nitride enhanced HEMT. The HEMT comprises a first semiconductor,a second semiconductor, a third semiconductor serving as a p-type layer, a source electrode, a drain electrode, a grid electrode and the like, wherein the first semiconductor and the second semiconductor respectively serve as a channel layer and a barrier layer, a groove structure is formed in the area, corresponding to the grid electrode, of the barrier layer, the groove structure cooperates withthe third semiconductor and the grid electrode to form a p-type grid, and the second semiconductor comprises a first structure layer and a second structure layer which are sequentially arranged on the first semiconductor. Compared with a mode of determining an etching reagent, the first structure layer has higher etching resistance than the second structure layer. The HEMT structure can be more accurately regulated and controlled, meanwhile, the HEMT has the better device performance. For example, the forward gate leakage and gate threshold voltage swing amplitude are remarkably improved, thein-chip uniformity of threshold voltage of the device can be guaranteed, and meanwhile, the HEMT structure is easier to manufacture and suitable for large-scale production.

Description

technical field [0001] The invention relates to a field effect transistor device, in particular to a III-nitride-enhanced HEMT based on a compound barrier layer structure and a manufacturing method thereof, belonging to the field of semiconductor technology. Background technique [0002] Compared with traditional silicon-based MOSFETs, high electron mobility transistors (High Electron Mobility Transistors, HEMTs) based on heterojunctions such as AGaN / AlN / GaN have unique advantages such as low on-resistance, high breakdown voltage, and high switching frequency. , so that it can be used as a core device in various power conversion systems, and has important application prospects in energy saving and consumption reduction, so it has received great attention from academia and industry. However, due to the polarization effect of the III-nitride material system, generally speaking, HEMTs based on AlGaN / AlN / GaN heterojunctions are depletion mode (normally on). When this type of dev...

AI Technical Summary

Problems solved by technology

However, since the gate region still adopts a low Al composition and a thin barrier layer structure, the potential barriers for p-type layer holes and channel layer electrons are relatively low, so it is very easy to cause the device to leak to the gate. increase, the gate threshold voltage swing becomes lower, which cannot meet the reliability requirements of the actual operation of the device, and the electrochemical corrosion and slow etching technology are used in the preparation process of the groove gate, so the process is complicated and difficult to control, which is not conducive to mass production

Images