Quantum plasmon material as well as preparation method and application thereof

A plasmon and quantum technology, applied in the field of optical coupling, can solve problems such as complex methods, and achieve the effects of simple preparation methods and complex preparation methods.

Inactive Publication Date: 2019-08-02
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the preparation process of quantum plasmonic materials in the prior art, physical / chemical vapor deposition, micro-nano processing and other processes are often required, and the methods are complicated.

Method used

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  • Quantum plasmon material as well as preparation method and application thereof
  • Quantum plasmon material as well as preparation method and application thereof
  • Quantum plasmon material as well as preparation method and application thereof

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preparation example Construction

[0023] The invention provides a method for preparing a quantum plasmonic material, comprising the following steps:

[0024] (1) Ultrasonic treatment after mixing the silver nanowire aqueous solution and the CdSe-ZnS quantum dot aqueous solution to obtain a mixed solution;

[0025] (2) Spin-coat the mixed solution obtained in the step (1) on the substrate under vacuum conditions to obtain a quantum plasmonic material.

[0026] In the invention, the silver nanowire aqueous solution and the CdSe-ZnS quantum dot aqueous solution are mixed and then ultrasonically treated to obtain a mixed solution.

[0027] In the present invention, the diameter of the silver nanowires is preferably 120-860nm, more preferably 150-800nm, more preferably 300-700nm; the concentration of the raw silver nanowire aqueous solution is preferably 1-10mg / mL, further Preferably it is 2-8 mg / mL, more preferably 4-6 mg / mL. In the present invention, the mass concentration of silver nanowires in the mixed solut...

Embodiment 1

[0040] (1) configuring the silver nanowires into an aqueous solution of silver nanowires with a concentration of 1 mg / mL;

[0041] (2) CdSe-ZnS quantum dots with a diameter of 5 nm are configured into an aqueous solution of quantum dots with a concentration of 1 μmol / L;

[0042] (3) Mix 100 μL of the above-mentioned silver nanowire aqueous solution with 50 μL of the above-mentioned quantum dot aqueous solution, and then add 1 mL of distilled water to dilute to obtain a mixed solution; ultrasonically treat the mixed solution for 10 minutes, so that a mixed solution suitable for forming a uniform coating layer can be obtained;

[0043](4) Use a pipette to take out 100 μL of the mixed solution, drop it on the cleaned and dried silicon wafer, place the silicon wafer on the stage of the spin coater, draw a vacuum, and cover the glass of the spin coater. Cover, adjust the spin coating speed, perform low speed spin coating and high speed spin coating in sequence, the speed of low spe...

Embodiment 2

[0045] (1) configuring the silver nanowires into a silver nanowire aqueous solution with a concentration of 5 mg / mL;

[0046] (2) CdSe-ZnS quantum dots with a diameter of 6 nm are configured into a quantum dot aqueous solution with a concentration of 2 μmol / L;

[0047] (3) Mix the above-mentioned silver nanowire aqueous solution and the above-mentioned quantum dot aqueous solution to obtain a mixed solution, the mass concentration of the silver nanowire in the mixed solution is 8wt%, and the mass concentration of the quantum dots in the mixed solution is 4wt%; the mixed solution is ultrasonically treated for 12min , can obtain the mixed solution that is suitable for forming uniform coating layer like this;

[0048] (4) Use a pipette to take out 100 μL of the mixed solution, drop it on the cleaned and dried silicon wafer, place the silicon wafer on the stage of the spin coater, draw a vacuum, and cover the glass of the spin coater. Cover, adjust the spin-coating speed, and per...

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Abstract

The invention provides a quantum plasmon material as well as a preparation method and application thereof and belongs to the technical field of optical coupling. The preparation method of the quantumplasmon material provided by the invention comprises the following steps: mixing a silver nano solution with a CdSe-ZnS quantum dot solution, and carrying out ultrasonic treatment so as to obtain a mixed solution; under a vacuum condition, carrying out spinning treatment on the mixed solution on a substrate, thereby obtaining the quantum plasmon material. According to the quantum plasmon material,silver nanowires are adopted as plasma waveguide and CdSe-ZnS quantum dots are adopted as a quantum emitter to establish a novel quantum plasmon system, the quantum plasmon material provided by the invention is simple in preparation method, by using a spinning technique, quantum dots are uniformly distributed on silver nanowires, the novel quantum plasmon system is obtained, and the problem thatin the prior art the quantum plasmon material is complex in preparation method can be solved.

Description

technical field [0001] The invention relates to the field of optical coupling technology, in particular to a quantum plasmon material capable of exciting plasmons and a preparation method and application thereof. Background technique [0002] In recent years, the research on how to improve the performance of nanophotonic circuits has become increasingly in-depth. The research directions mainly include reducing the size of nanophotonic devices, improving the working speed of devices, and developing new quantum plasmonic materials. Researchers at home and abroad are committed to developing quantum plasmonic materials with various nanomaterials as basic units, and applying them in integrated circuits to create multifunctional and high-performance integrated nanophotonic circuits. [0003] Plasmons refer to the fact that in a solid system with a certain carrier concentration, due to the Coulomb interaction between carriers, the fluctuation of the carrier concentration in one pla...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00
CPCB82Y20/00B82Y30/00C09K11/02C09K11/883
Inventor 杨先光李宝军娄在祝文龙李宇超陈沁
Owner JINAN UNIVERSITY
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