A kind of preparation method of multi-layer monocrystalline silicon film
A single-crystal silicon and single-crystal silicon wafer technology, which is applied in the field of preparation of multi-layer single-crystal silicon thin films, can solve problems such as complex operations and unsatisfactory technical effects, and achieve high pre-bonding force, excellent bonding effect, and comprehensive technology good effect
Active Publication Date: 2021-06-04
SHENYANG SILICON TECH
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[0002] In the prior art, Chinese patent application documents with application numbers 201510460906.6 and 201510481429.1 disclose the preparation method of multi-layer monocrystalline silicon thin film; however, its operation is relatively complicated, and its technical effect is still unsatisfactory
There are still many technical problems to be solved urgently, for example: there are still relatively obvious resistance transition regions between the layers of multi-layer monocrystalline silicon thin film products
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Embodiment 1
[0028] A method for preparing a multilayer single crystal silicon film, which sequentially prepares a multilayer single crystal silicon film according to the following requirements:
[0029] ① First, take two silicon wafers Si-1 and Si-2 for conventional wet cleaning to clean the surface, and then use plasma activation technology to treat the surface for 5s-20s under vacuum conditions (vacuum degree < 1Torr) to enhance bonding pre-bonding force, pre-bonding;
[0030] ②Raise the pre-bonded silicon wafer from room temperature to a constant temperature of 200-300°C at a rate of 5-10°C / min, and maintain it at this temperature for 6-10 hours for annealing. It can completely bond two silicon wafers together;
[0031] ③ For this bonding sheet, the thickness of Si-2 is reduced to meet the required thickness requirements through rough grinding + fine grinding + polishing; the remaining 2-100um of Si-2 on the top layer is required;
[0032] ④ Treat the SOI silicon wafer obtained in st...
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A method for preparing a multi-layer monocrystalline silicon thin film. The multilayer monocrystalline silicon thin film is prepared in turn according to the following requirements: ① First, take two single crystal silicon wafers with clean surfaces and use the plasma activation technology to treat the surface of the silicon wafers, and then pre-process the silicon wafers. Bonding; ②Transfer the bonded silicon wafers to an annealing furnace at a temperature of 200-300°C for 6-10 hours of annealing, which not only prevents the generation of the transition zone but also completes the complete bonding of the two silicon wafers , ③Thinning the annealed bonded sheet to achieve the required target thickness; ④Thinning the thinned SOI sheet, and performing ①‑③ again according to one single crystal silicon wafer and another single crystal silicon wafer operation to obtain a multi-layer monocrystalline silicon film. The invention adopts the silicon chip treated by plasma activation technology to have a large pre-bonding force when bonding, and the bonding effect after annealing is excellent; there is no obvious resistance transition zone at the interface of each layer; the thickness of each layer of single crystal silicon can be effectively controlled; its comprehensive The technical effect is good; it has relatively huge economic value and social value.
Description
technical field [0001] The invention relates to the technical field of preparation of multilayer single crystal silicon thin films, and in particular provides a preparation method of multilayer single crystal silicon thin films. Background technique [0002] In the prior art, Chinese patent application documents with application numbers 201510460906.6 and 201510481429.1 disclose a method for preparing a multi-layer monocrystalline silicon thin film; however, the operation is relatively complicated, and the technical effect is still unsatisfactory. There are still many technical problems to be solved urgently, for example: there are still relatively obvious resistance transition regions between the layers of multi-layer single crystal silicon thin film products. [0003] People are eager to obtain a multi-layer monocrystalline silicon thin film with excellent technical effect. Contents of the invention [0004] The object of the present invention is to provide a multi-laye...
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IPC IPC(8): H01L21/02
CPCH01L21/02532H01L21/02664H01L21/76256H01L21/02052H01L21/30625H01L21/324H01L21/76251
Inventor 党启森
Owner SHENYANG SILICON TECH