Method for chemically plating Ni-Mo-P on silicon dioxide

Abstract

The invention relates to a method for chemically plating Ni-Mo-P on silicon dioxide (SiO2), which belongs to the electroless plating application field. The method comprises: firstly, carrying out former treatment such as cleaning, coupling, activating and the like for a substrate (SiO2Si), then, arranging the substrate into chemical plating liquid which is heated in water bath, happening redox reaction in the chemical plating liquid, and rapidly depositing on the surface of the silicon dioxide (SiO2) to obtain Ni-Mo-P film. The Ni-Mo-P film which is prepared by the technique has bright, compact, and flat surface, strong binding force with the substrate and excellent barrier property. The method is convenient for preparing solution, production procedure is easy, and the cost is low, which is one of the best choices for integrating electric circuit copper interconnected wire barrier layers in the future.

Description

technical field

[0001] The invention belongs to the application field of electroless plating, in particular to a 2 ) on the electroless plating ternary alloy thin film method, which is mainly applied to the preparation of the barrier layer of the VLSI copper interconnection line. Background technique

[0002] Due to the limitations of aluminum wires on the performance of integrated circuits in terms of RC delay and electromigration, copper wires have gradually replaced aluminum wires as interconnect materials in integrated circuits. Compared with the traditional metal interconnect material aluminum, copper has low resistivity, and has 2 orders of magnitude higher anti-electromigration ability and higher thermal conductivity than aluminum, that is, the use of copper as interconnect material can greatly improve the circuit and operation speed reliability. However, copper in silicon dioxide (SiO 2 ) and silicon (Si) diffuse very quickly, and once copper enters it, it will fo...