Method for chemically plating Ni-Mo-P on silicon dioxide

A silicon dioxide and electroless plating technology, applied in the field of electroless plating, can solve the problem of high cost

Inactive Publication Date: 2008-08-06
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although chemical vapor deposition can achieve high coverage filling, it is very expensive

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0006] Embodiment one: to substrate (SiO 2 / Si) carry out pre-treatment, at first carry out the ultrasonic cleaning of acetone, 10wt% hydrochloric acid, deionized water to it respectively, the ultrasonic ultrasonic frequency is 40KHz, power 100W, and each cleaning time is 5 minutes; Put into KD-550 ethanol solution at 50-60°C for coupling for 10 minutes, the concentration of KD-550 is 1wt%; then place the substrate in a mixed solution of palladium chloride and hydrochloric acid at 50-60°C for 5 minutes, The concentration of palladium chloride and hydrochloric acid is 0.1g / L and 3.65g / L respectively, and the pH value of this mixed solution is adjusted to 5.0~6.5 by sodium hydroxide solution.

[0007] The solution is 20g / L nickel sulfate, 0.1g / L sodium molybdate, 20g / L sodium hypophosphite, 20g / L sodium citrate, 1g / L glacial acetic acid, 0.005g / L ammonium fluoride, 0.02g / L The composition is composed of sodium lauryl sulfate, sodium hydroxide solution and deionized water are ad...

Embodiment 2

[0009] For the substrate (SiO 2 / Si) carry out the previous processing as above.

[0010] The solution is 25g / L nickel sulfate, 0.2g / L sodium molybdate, 25g / L sodium hypophosphite, 25g / L sodium citrate, 3g / L glacial acetic acid, 0.004g / L ammonium fluoride, 0.03g / L The composition is composed of sodium lauryl sulfate, sodium hydroxide solution and deionized water are added dropwise to adjust the pH to 11, and the solution temperature is 85°C.

Embodiment 3

[0012] For the substrate (SiO 2 / Si) carry out the previous processing as above.

[0013] The solution is 30g / L nickel sulfate, 0.5g / L sodium molybdate, 30g / L sodium hypophosphite, 30g / L sodium citrate, 2g / L glacial acetic acid, 0.006g / L ammonium fluoride, 0.04g / L The composition is composed of sodium lauryl sulfate, sodium hydroxide solution and deionized water are added dropwise to adjust the pH to 12, and the solution temperature is 80°C.

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PUM

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Abstract

The invention relates to a method for chemically plating Ni-Mo-P on silicon dioxide (SiO2), which belongs to the electroless plating application field. The method comprises: firstly, carrying out former treatment such as cleaning, coupling, activating and the like for a substrate (SiO2Si), then, arranging the substrate into chemical plating liquid which is heated in water bath, happening redox reaction in the chemical plating liquid, and rapidly depositing on the surface of the silicon dioxide (SiO2) to obtain Ni-Mo-P film. The Ni-Mo-P film which is prepared by the technique has bright, compact, and flat surface, strong binding force with the substrate and excellent barrier property. The method is convenient for preparing solution, production procedure is easy, and the cost is low, which is one of the best choices for integrating electric circuit copper interconnected wire barrier layers in the future.

Description

technical field [0001] The invention belongs to the application field of electroless plating, in particular to a 2 ) on the electroless plating ternary alloy thin film method, which is mainly applied to the preparation of the barrier layer of the VLSI copper interconnection line. Background technique [0002] Due to the limitations of aluminum wires on the performance of integrated circuits in terms of RC delay and electromigration, copper wires have gradually replaced aluminum wires as interconnect materials in integrated circuits. Compared with the traditional metal interconnect material aluminum, copper has low resistivity, and has 2 orders of magnitude higher anti-electromigration ability and higher thermal conductivity than aluminum, that is, the use of copper as interconnect material can greatly improve the circuit and operation speed reliability. However, copper in silicon dioxide (SiO 2 ) and silicon (Si) diffuse very quickly, and once copper enters it, it will fo...

Claims

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Application Information

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IPC IPC(8): C23C18/31C23C18/18
Inventor 杨志刚刘殿龙
Owner TSINGHUA UNIV
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