Film bulk acoustic wave resonator and manufacturing method thereof

Abstract

The embodiment of the invention discloses a film bulk acoustic wave resonator and a manufacturing method thereof. The film bulk acoustic wave resonator comprises a silicon-on-insulator substrate; wherein the silicon-on-insulator substrate sequentially comprises a substrate, an insulating layer and a suspension silicon layer, the suspension silicon layer is doped with an impurity material, so thatthe suspension silicon layer is used as a bottom electrode; a piezoelectric film layer which is arranged on one side, far away from the substrate, of the suspension silicon layer; a top electrode which is arranged on one side, far away from the substrate, of the piezoelectric film layer; and an air cavity which is formed in one side, close to the suspension silicon layer, of the insulating layer.According to the technical scheme provided by the embodiment of the invention, an implementation scheme of the bottom electrode of the film bulk acoustic wave resonator can be provided, so that the problem that the bottom electrode is easy to damage is prevented.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of wireless communication, and in particular to a thin-film bulk acoustic resonator and a manufacturing method thereof. Background technique [0002] With the rapid development of wireless communication, wireless signals are becoming more and more crowded, and new requirements such as integration, miniaturization, low power consumption, high performance, and low cost are put forward for filters working in the radio frequency band. Traditional surface acoustic wave filters are increasingly unable to meet such technical indicators due to limitations in frequency and power. Film Bulk Acoustic Resonator (FBAR) has gradually become a hot spot in the research of RF filters due to its characteristics of CMOS process compatibility, high quality factor, low loss, low temperature coefficient, and high power carrying capacity. [0003] The core structure of the film bulk acoustic resonator includ...

AI Technical Summary

Problems solved by technology

Single crystal piezoelectric materials are generally obtained by Metal Organic Chemical Vapor Deposition (MOCVD) under high temperature environment, but the laid bottom electrode is easily melted and damaged at high temperature, which is not conducive to the growth of single crystal piezoelectric materials.

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